Abstract:Certain two-dimensional (2D) materials exhibit intriguing properties such as valley polarization, ferroelectricity, superconductivity and charge-density waves. Many of these materials can be manually assembled into atomic-scale multilayer devices under ambient conditions, owing to their exceptional chemical stability. Efforts have been made to add a magnetic degree of freedom to these 2D materials via defects, but only local magnetism has been achieved. Only with the recent discoveries of 2D materials supporting intrinsic ferromagnetism have stacked spintronic devices become realistic. Assembling 2D multilayer devices with these ferromagnets under ambient conditions remains challenging due to their sensitivity to environmental degradation, and magnetic order at room temperature is rare in van der Waals materials. Here, we report the growth of air-stable ultra-thin epsilon-phase iron oxide crystals that exhibit magnetic order at room temperature. These crystals require no passivation and can be prepared in large quantity by cost-effective chemical vapor deposition (CVD). We find that the epsilon phase, which is energetically unfavorable and does not form in bulk, can be easily made in 2D down to a seven unit-cell thickness. Magneto-optical Kerr effect (MOKE) magnetometry of individual crystals shows that even at this ultrathin limit the epsilon phase exhibits robust magnetism with coercive fields of hundreds of mT. These measurements highlight the advantages of ultrathin iron oxide as a promising candidate towards air-stable 2D magnetism and integration into 2D spintronic devices.

Tunable room-temperature ferromagnetism in Co-doped two-dimensional van der Waals ZnO

Characterization of ZnO:Co particles prepared by hydrothermal method for room temperature magnetism

Ultrathin Ferrite Nanosheets for Room-Temperature Two-Dimensional Magnetic Semiconductors.

Robust room temperature ferromagnetism in an itinerant van der Waals antiferromagnet

Room-temperature Ferromagnetism in Co-doped ZnO Diluted Magnetic Semiconductor

Nearly-room-temperature ferromagnetism and tunable anomalous Hall effect in atomically thin Fe4CoGeTe2

Room-temperature long-range ferromagnetic order in a confined molecular monolayer

Near-room Temperature Ferromagnetism and a Tunable Anomalous Hall Effect in Atomically Thin Fe4CoGeTe2.

Graphene Activating Room-Temperature Ferromagnetic Exchange in Cobalt-Doped ZnO Dilute Magnetic Semiconductor Quantum Dots.

Embedding atomic cobalt into graphene lattices to activate room-temperature ferromagnetism

Ferromagnetism from Co-Doped ZnO Nanocantilevers above Room Temperature

A Facile Way to Regulating Room-Temperature Ferromagnetic Interaction in Co-doped ZnO Diluted Magnetic Semiconductor by Reduced Graphene Oxide Coating

Enhanced Room Temperature Ferromagnetism in Co-Doped Zno Mediated by Interstitial H

Room-Temperature Ferromagnetism in Co-Doped Zno Prepared by Microemulsion

Room-temperature Ferromagnetism in Carbon-Doped ZnO.

Ferromagnetism, Variable Range Hopping, and the Anomalous Hall Effect in Epitaxial Co:ZnO Thin Film

Room-Temperature Ferromagnetism in Co-Doped Zno Bulk Induced by Hydrogenation

Realizing Room‐Temperature Ferromagnetism in Molecular‐Intercalated Antiferromagnet VOCl

High-Tc ferromagnetism in a Co-doped ZnO system dominated by the formation of a zinc-blende type Co-rich ZnCoO phase.

Room Temperature Magnetic Order in Air-Stable Ultra-Thin Iron Oxide

Tunable Magnetism in Atomically Thin Itinerant Antiferromagnet with Room-Temperature Ferromagnetic Order