Oxygen Vacancy Effect on Room-Temperature Ferromagnetism of Rutile Co:Tio2 Thin Films

Wensheng Yan,Zhihu Sun,Zhiyun Pan,Qinghua Liu,Tao Yao,Ziyu Wu,Cheng Song,Fei Zeng,Yaning Xie,Tiandou Hu,Shiqiang Wei
DOI: https://doi.org/10.1063/1.3075844
IF: 4
2009-01-01
Applied Physics Letters
Abstract:The x-ray absorption near edge structure spectroscopy and first-principles calculations were combined to study the local and electronic structures of rutile Co:TiO2 thin film with room-temperature ferromagnetism. It was revealed that the CoTi2+ substituting the Ti site forms CoTi2+-VO complex with the O vacancy generated in the annealing process. The O vacancy induces a spin-split donor impurity band with a t2g character within the gap region. We proposed that the strong exchange interaction between the localized carriers captured by O vacancy and the substitutional Co ions leads to the ferromagnetism of the Co:TiO2 thin film.
What problem does this paper attempt to address?