Spin-relaxation and magnetoresistance in FM/SC/FM tunnel junctions

Saburo Takahashi,Taro Yamashita,Hiroshi Imamura,Sadamichi Maekawa

DOI: https://doi.org/10.1016/S0304-8853%2801%2900714-4

2001-07-19

Abstract:The effect of spin relaxation on tunnel magnetoresistance (TMR) in a ferromagnet/superconductor/ferromagnet (FM/SC/FM) double tunnel junction is theoretically studied. The spin accumulation in SC is determined by balancing of the spin-injection rate and the spin-relaxation rate. In the superconducting state, the spin-relaxation time becomes longer with decreasing temperature, resulting in a rapid increase of TMR. The TMR of FM/SC/FM junctions provides a useful probe to extract information about spin-relaxation in superconductors.

Mesoscale and Nanoscale Physics,Superconductivity

What problem does this paper attempt to address?

This paper aims to solve the problem of the influence of spin relaxation on tunneling magnetoresistance (TMR) in ferromagnet/superconductor/ferromagnet (FM/SC/FM) tunnel junctions. Specifically, the core issues of the research include:

1. **Influence of spin relaxation on TMR**: The paper explores how the spin relaxation time \(\tau_s\) affects TMR in FM/SC/FM double - tunnel junctions. As the temperature decreases, the spin relaxation time \(\tau_s\) in the superconducting state becomes longer, resulting in a rapid increase in TMR.

2. **Theoretical model and calculation**: By balancing the spin injection rate and the spin relaxation rate, the spin accumulation in the superconductor is determined. The spin - dependent tunneling current is calculated using the Fermi golden rule, and the expression of TMR is derived. The key formulas are as follows:
- Expression of tunneling current \(I_\sigma\):
\[
I_\uparrow^1(V) = G_\uparrow^1 \chi(T) \left[\frac{V}{2} - \frac{\delta\mu}{e}\right]
\]
\[
I_\downarrow^1(V) = G_\downarrow^1 \chi(T) \left[\frac{V}{2} + \frac{\delta\mu}{e}\right]
\]
\[
I_\uparrow^2(V) = G_\uparrow^2 \chi(T) \left[\frac{V}{2} + \frac{\delta\mu}{e}\right]
\]
\[
I_\downarrow^2(V) = G_\downarrow^2 \chi(T) \left[\frac{V}{2} - \frac{\delta\mu}{e}\right]
\]
- TMR ratio:
\[
\text{TMR} = \frac{I_P - I_{AP}}{I_{AP}} = \frac{P^2}{1 - P^2 + \Gamma_s}
\]

3. **Experimental verification and application**: The paper points out that the TMR effect can be used as an effective detection method to extract information about spin relaxation in superconductors. Especially in the superconducting state, due to the prolongation of the spin relaxation time \(\tau_s\), the TMR shows a significant enhancement.

4. **Influence of spin - orbit scattering**: The paper also considers the influence of spin - orbit scattering on spin relaxation in the superconducting state. By introducing the spin - orbit interaction \(H_{so}\), the expression of the spin relaxation time \(\tau_s\) is derived:
\[
\tau_s = \tau_{sf} \frac{\int_\Delta^\infty E \sqrt{E^2 - \Delta^2} [f_\uparrow(E) - f_\downarrow(E)] dE}{\int_\Delta^\infty [f_\uparrow(E) - f_\downarrow(E)] dE}
\]
where \(\tau_{sf}\) is the spin - flip scattering time in the normal state.

In conclusion, through theoretical analysis and calculation, this paper reveals the important influence of spin relaxation on TMR in FM/SC/FM tunnel junctions and provides a new perspective and method for studying spin transport in superconductors.