Photoelectronic Behaviors of Bilayer Ultrathin Films Manganite-Based Heterojunctions
W. W. Gao,L. Hu,Y. P. Sun,J. R. Sun,J. Shen,R. J. Chen,Y. F. Chen,B. G. Shen
DOI: https://doi.org/10.1063/1.4798341
IF: 2.877
2013-01-01
Journal of Applied Physics
Abstract:We presented a systematic study on the photoelectronic properties of the La0.67Ba0.33MnO3 (20 nm)/LaMnO3(t)/SrTiO3:0.05 wt. % Nb (LBMO/LMO(t)/STON) junctions with 0 ≤ t ≤ 30 nm. The short-circuit photocurrent (Iph) is found to show a complex dependence on the LMO buffer layer. It undergoes first a sharp drop as the layer thickness of LMO increases from 0 to 3 nm and then, after a rigid turn, a slow decrease for further increase in layer thickness. These results indicate that the coupling between LBMO and STON can be effectively depressed by a LMO layer of 3 nm. The photocurrent is further found to be temperature dependent, increasing monotonically upon cooling, and the maximal growth, occurring in the junction of t = 3 nm, can be as high as 226% when cooled from 320 K to 40 K. Meanwhile, the Iph-t dependences at different temperatures are similar, which is an indication of temperature independence for the diffusion length of the photocarriers. Analysis of the capacitance-voltage relations indicates that the change of interfacial barrier is the reason for the peculiar photoelectronic behavior observed.