The Rectifying Property And Magnetoresistance Of La0.67ca0.33mno3/Sio2/Si Heterojunction

Peilin Lang,Yonggang Zhao,Chao Xiong,Peng Wang,Jie Li,Dongning Zheng

DOI: https://doi.org/10.1063/1.2337555

IF: 2.877

2006-01-01

Journal of Applied Physics

Abstract:We have fabricated a heterojunction by depositing La0.67Ca0.33MnO3 film on electron doped silicon wafer with a buffer layer of natural SiO2. The current-voltage measurement shows that it is a diode with a good rectifying property in a wide temperature range. At high positive voltages, the current-voltage curve shows space charge limited (SCL) current behavior, manifesting itself as a SCL diode. At low positive and negative voltages, the resistance of the junction shows a peak at a certain temperature, which decreases with increasing positive voltage and keeps constant at negative voltages. Magnetoresistance of the junction shows a similar temperature dependence as the resistance of the junction. Calculations show that these phenomena can be attributed to the depletion layer of the La0.67Ca0.33MnO3 film. This work also demonstrates that SCL diode can be realized in La0.67Ca0.33MnO3/SiO2/Si with the presence of the SiO2 layer. (c) 2006 American Institute of Physics.