Rectifying And Magnetotransport Properties Of The Heterojunction Of Co-Doped And Undoped Tio2-Delta With La0.69ca0.31mno3 Single Crystal

c m xiong,y g zhao,zhehui zhao,zhiqi kou,zehao cheng,h f tian,h x yang,j q li
DOI: https://doi.org/10.1063/1.2357036
IF: 4
2006-01-01
Applied Physics Letters
Abstract:Electron-doped wide-band-gap dilute magnetic semiconductor Ti0.93Co0.07O2-delta and TiO2-delta were grown on a hole-doped La0.69Ca0.31MnO3 single crystal to form heterojunctions. These junctions exhibit good rectifying properties and magnetoresistance effect over a relatively wide temperature range. The results for TiO2-delta were similar to that of Ti0.93Co0.07O2-delta in all respects. A schematic band structure of the junction was proposed to account for the results. This work indicates that manganite single crystals can be used as substrates for integration with other materials, which may open an alternative avenue for the exploitation of the manganite-based devices. (c) 2006 American Institute of Physics.
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