FDA warns on primate xenotransplants

D. Butler

DOI: https://doi.org/10.1038/19144

IF: 64.8

1999-04-15

Nature

Abstract:

What problem does this paper attempt to address?

Reversible Low-Temperature Metal Node Distortion During Atomic Layer Deposition of Al2o3 and Tio2 on Uio-66-Nh2 Metal-Organic Framework Crystal Surfaces

Paul C. Lemaire,Dennis T. Lee,Junjie Zhao,Gregory N. Parsons

DOI: https://doi.org/10.1021/acsami.7b05214

IF: 9.5

2017-01-01

ACS Applied Materials & Interfaces

Abstract:Metal organic frameworks (MOFs) are chemically functionalized micro- and rnesoporous materials with high surface areas and are attractive for multiple applications including filtration, gas storage, and catalysis. Postsynthetic modification (PSM), via solution or vapor-based techniques, is a way to impart additional complexity and functionality into these materials. There is a desire to shift toward vapor-phase methods in order to ensure more controlled modification and more efficient reagent and solvent removal from the modified MOF material. In this work we explore how the metal precursors titanium tetrachloride (TiCl4.) and trimethylaluminum (TMA), commonly used in atomic layer deposition, react with UiO-66-NH2 MOF. Using in situ quartz crystal microbalance (QCM) and Fourier transform infrared spectroscopy (FTIR) at 150 and 250 degrees C, we find that the ALD precursors react with mu(3)-OH hydroxyl and mu(3)-O bridging oxygen groups on Zr-6 nodes, as well as oxygen from carboxylate linker groups. The reactions occur predominantly at the crystal surface at mu(3)-OH hydroxyl sites, with TiCl4 exhibiting greater diffusion into the MOF subsurface. FTIR analysis suggests that, at 150 degrees C, both TiCl4 and TMA reversibly dehydroxylate the hydroxylated UiO-66-NH2, which is accompanied by distortion of the zirconium metal clusters. Finally, we show that TiCl4 is able to react with the dehydroxylated UiO-66-NH2 structure, suggesting that TiCl4 is also able to react directly with the bridging oxygen in the metal clusters or carboxylate groups on the organic ligand. A better understanding of chemical and thermally driven MOF dehydroxylation reactions can be important for improved postsynthetic modification of MOFs.
Tin oxide atomic layer deposition from tetrakis(dimethylamino)tin and water

Marja N. Mullings,Carl Hägglund,Stacey F. Bent

DOI: https://doi.org/10.1116/1.4812717

2013-11-01

Abstract:Due to the abundance and usefulness of tin oxide for applications such as transparent conductors, sensors, and catalysts, it is desirable to establish high quality atomic layer deposition (ALD) of this material. ALD allows for uniform, conformal coating of complex topographies with ultrathin films and can broaden the applicability of tin oxide to systems such as nanostructured solar cells. The present work examines the ALD of tin oxide by means of the precursor tetrakis(dimethylamino)tin and water as a counter-reactant. Low temperature growth in the range of 30–200 °C on Si(100) and glass substrates is studied. It is found that the growth rate increases with reduced temperature, up to ∼2.0 Å/cycle at 30 °C, as compared to 0.70 Å/cycle at 150 °C. The ALD process is established to be saturated even at the lowest temperature studied, for which the film contamination levels are below the detection limits of x-ray photoelectron spectroscopy. As-deposited films are smooth (rms roughness of 33 Å for a 460 Å thick film deposited on Si at 150 °C) and amorphous according to x-ray diffractometry. However, post-annealing to 600 °C in nitrogen leads to the formation of polycrystalline rutile SnO2. The optical constants obtained from variable angle spectroscopic ellipsometry suggest that as-deposited films have amorphous type bandgaps, which decrease with increasing temperature and film thickness. High quality, amorphous SnO2 films with moderately tunable optical properties are thus obtained by ALD at temperatures as low as 30 °C using a commercially available tin precursor and water.
Meet-in-the-Middle Preimage Attacks on Hash Modes of Generalized Feistel and Misty Schemes with SP Round Function

Dukjae Moon,Deukjo Hong,Daesung Kwon,Seokhie Hong

DOI: https://doi.org/10.1587/TRANSFUN.E95.A.1379

2012-08-01

IEICE Transactions on Fundamentals of Electronics Communications and Computer Sciences

Abstract:
Theoretical study on tin oxide surface chemistry mechanism and thermodynamic properties for atomic layer deposition equipment optimization

Pengkai Wang,Yongshuan Wu,Tianxiang Wu,Jinqing Xiao,Wei Xu,Yichang Peng,Junhui Li

DOI: https://doi.org/10.1007/s10853-023-09007-z

IF: 4.5

2023-10-24

Journal of Materials Science

Abstract:In order to obtain the reaction mechanism and thermodynamic parameters on tin oxide surface chemistry, which provide theoretical data for atomic layer deposition equipment optimization. The reaction mechanism of preparation of SnO 2 pathway for TDMASn and H 2 O half reaction by atomic layer deposition (ALD) was studied by Density Function Theory. The study employed the average local ion energy (ALIE) and electrostatic potential (ESP) to predict potential reaction sites. These reaction sites were identified by investigating the ALIE extremes and the distribution of ESP intervals between the reactants. The results revealed that the primary reaction sites resided between the nitrogen (N) atoms within three distinct dimethylamino moieties and the outer region of tin (Sn) atoms. Transition state calculations were subsequently performed to ascertain the activation energies of the reaction steps, which resulted in TS1 (11.75 kcal mol −1 ), TS2 (7.16 kcal mol −1 ), TS3 (6.49 kcal mol −1 ), and TS4 (5.76 kcal mol −1 ). The interaction region indicator analysis was employed to verify the reaction mechanism, and the breakage and reformation of chemical bonds during the reaction were analyzed. The reaction rate constant (k) was calculated by the transition state theory. The Wigner tunneling factor also was used for correction to determine the reaction rate constants at both the standard temperature (298.15 K) and the reaction temperature (413.15 K). Meanwhile, the thermodynamic parameters of each reactant and product were calculated. These parameters can provide theoretical data to computational fluid dynamics model for the design and optimization of equipment for the preparation of SnO 2 thin film using ALD.

materials science, multidisciplinary
Mixed Tin-Titanium Oxides by Atomic Layer Deposition on Planar Substrates: Physical and Electronic Structure

Michael J. Mortelliti,Chiung-Wei Huang,Joanna M. Atkin,Jillian L. Dempsey

DOI: https://doi.org/10.1016/j.apsusc.2021.151564

IF: 6.7

2022-01-01

Applied Surface Science

Abstract:Ternary atomic layer deposition of Sn-doped TiOx (Sn:TiOx) and Ti-doped SnOx (Ti:SnOx) was performed using tetrakisdimethylamidotitanium (IV) and tin(IV) with water at 150 °C on (1 0 0) Si and quartz substrates. The physical structure of the films was investigated using scanning electron, atomic force, and Kelvin probe force microscopies as well as spectroscopic ellipsometry, Raman spectroscopy, and X-ray diffraction. All as-deposited films are amorphous and possessed flat and conformal topographies with low surface roughness (<1 nm). Annealed Sn:TiOx and Ti:SnOx crystallize into the tetragonal anatase TiO2 and cassiterite SnO2 structures, respectively, without large variations to the film topography. The chemical composition of the as-deposited and annealed films was investigated through X-ray photoelectron spectroscopy. While dopants are homogenously mixed, the ternary ALD to form Sn:TiOx and Ti:SnOx surprisingly does not follow the rule of mixtures, despite similarities in both the growth rates of binary SnOx and TiOx and the precursors used. This finding is also supported by spectroscopic ellipsometry. We postulate the deviation from the rule of mixtures is due to non-ideal surface chemistry of the binary ALD of SnOx. The optical bandgap of all films was quantified by the Tauc analysis and the valence band position was investigated by valence band X-ray photoelectron spectroscopy. Intra-bandgap states above the valence band maximum were observed for as-deposited Ti:SnOx and Sn:TiOx and ascribed to 5 s states from Sn2+ ions. The presence of these intra-bandgap states induces enhanced visible absorption and bathochromic shifts to the apparent bandgap for all as-deposited films. Annealing the films removes the intra-bandgap states and increases the optical bandgap. Simplified band diagrams created using the data available demonstrated that the conduction and valence band positions did not vary between the positions of pure TiO2 or SnO2 with monotonic increases to the dopant incorporation.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Surface Reaction Kinetics for Inherent Selective Atomic Layer Deposition of Tantalum Oxide

Kun Cao,Zilian Qi,Eryan Gu,Yanwei Wen,Rong Chen

DOI: https://doi.org/10.1149/ma2023-02291459mtgabs

2023-01-01

ECS Meeting Abstracts

Abstract:The chemical principal and mechanisms that enable selective atomic layer depositions are gaining rapid growing interests, which have unlocked attractive avenues for the development of novel nanostructures by depositing atoms at desired surface locations. It has found versatile applications in emerging fields beyond semiconductor industry. Yet with the continuing downscaling, it is important to expand approaches for selective ALD with atomic scale precision on nanoscale features. The self-driven selective growth is needed, modifying specific surface down to atoms, to enable unprecedented capability of tuning the structure-property relationship for emerging applications. In this talk, the inherently selective atomic layer deposition processes will be discussed. Previously, we have demonstrated facet-selective ALD processes, which based on intrinsic differences of precursors chemisorption on terraces or step edges of nanoparticles. To expand the inherently ASD, the acidity and alkaline, surface electronegativity, lattice strains could be exploited to achieve this inhibitor-free selective deposition process. Tantalum oxide was studied on a series of oxide substrates. Although the oxides have -OH groups on the surface and proposed to have similar nucleation sites, there are long nucleation delays on basic oxides. The H-transfer reaction is a key factor to influence the reaction barrier. It is hard to nucleate on basic substrates because the H-transfer reaction is blocked. Another demonstration is the redox-coupled inherently selective ALD for self-alignment of tantalum oxide on SiO 2 /Cu nanopatterns. By adding an in-situ ethanol reduction pulse before each traditional binary ALD cycle, and the ‘reduction-adsorption-oxidation’ ALD process increases the selectivity. Self-aligned manufacturing on nanoscale Cu/SiO 2 patterns without excessive mushroom growth at the edge and undesired nucleation defects on the Cu region. The process can be reliably repeated to yield more than 5 nm-thick Ta 2 O 5 on the SiO 2 region, while no undesired deposition occurs on Cu patterns. In addition, an anisotropic growth model with the dynamical competition of expansion and dissociation of the nucleus is proposed to nucleation delay are quantitively predicted and the model provides a practical method to evaluate the selectivity of ALD theoretically. It provides a new strategy for inherently selective ALD, which will expand the selective toolbox of nanofabrication for next-generation nanoelectronic applications.
In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3

S. B. S. Heil,P. Kudlacek,E. Langereis,R. Engeln,M. C. M. van de Sanden,W. M. M. Kessels

DOI: https://doi.org/10.1063/1.2357886

IF: 4

2006-09-25

Applied Physics Letters

Abstract:Reaction mechanisms during plasma-assisted atomic layer deposition (ALD) of Al2O3 from Al(CH3)3 and O2 plasma were studied by time-resolved quartz crystal microbalance measurements, mass spectrometry, and optical emission spectroscopy. Al(CH3)3 chemisorption on the oxide surface after the plasma pulse releases CH4 products while from the detection of CO, CO2, and H2O in the O2 plasma it is established that surface –CH3 groups are predominantly removed by O radical-driven combustionlike reactions. Also a second pathway exists for –CH3 removal driven by H2O generated in this plasma step. These reaction pathways are expected to be generic for plasma-assisted ALD of oxides from metal organic precursors.

physics, applied
Effect of Co-Reactants on Interfacial Oxidation in Atomic Layer Deposition of Oxides on Metal Surfaces

Jay V. Swarup,Heng-Ray Chuang,Amy L. You,James R. Engstrom

DOI: https://doi.org/10.1021/acsami.3c19033

IF: 9.5

2024-03-21

ACS Applied Materials & Interfaces

Abstract:We have examined the atomic layer deposition (ALD) of Al(2)O(3) using TMA as the precursor and t-BuOH and H(2)O as the co-reactants, focusing on the effects of the latter on both the ALD process and the possible modification of the underlying substrate. We employed a quartz crystal microbalance (QCM) to monitor ALD in situ and in real time, and the deposited thin films have been characterized using X-ray photoelectron spectroscopy, spectroscopic ellipsometry, X-ray reflectivity, and atomic force...

materials science, multidisciplinary,nanoscience & nanotechnology
Molecular Mechanism of Selective Al2O3 Atomic Layer Deposition on Self-Assembled Monolayers

Youngjin Choi,Hyeng Jin Kim,Eunchan Kim,Huiyeong Kang,Junhyeok Park,Young Rag Do,Kyungwon Kwak,Minhaeng Cho

DOI: https://doi.org/10.1021/acsami.3c09529

2023-08-30

Abstract:Area-selective atomic layer deposition (AS-ALD) of insulating metallic oxide layers could be a useful nanopatterning technique for making increasingly complex semiconductor circuits. Although the alkanethiol self-assembled monolayer (SAM) has been considered promising as an ALD inhibitor, the low inhibition efficiency of the SAM during ALD processes makes its wide application difficult. We investigated the deposition mechanism of Al2O3 on alkanethiol-SAMs using temperature-dependent vibrational sum-frequency-generation spectroscopy. We found that the thermally induced formation of gauche defects in the SAMs is the main causative factor deteriorating the inhibition efficiency. Here, we demonstrate that a discontinuously temperature-controlled ALD technique involving self-healing and dissipation of thermally induced stress on the structure of SAM substantially enhances the SAM's inhibition efficiency and enables us to achieve 60 ALD cycles (6.6 nm). We anticipate that the present experimental results on the ALD mechanism on the SAM surface and the proposed ALD method will provide clues to improve the efficiency of AS-ALD, a promising nanoscale patterning and manufacturing technique.
A Water‐free Low Temperature Process for Atomic Layer Deposition of Al2O3 Films

Jiao-Jiao Guo,Ming-Da Li,Qing-Qing Sun,Wen Yang,Peng Zhou,Shi-Jin Ding,David Wei Zhang

DOI: https://doi.org/10.1002/cvde.201207032

2013-01-01

Chemical Vapor Deposition

Abstract:A new low temperature atomic layer deposition (LT-ALD) Al2O3 process using trimethylaluminum (TMA) and acetic acid (CH3COOH) is studied both theoretically and experimentally. The atomistic mechanisms of the two deposition half-cycles on Al-CH3*, Al-OH*, and Al(2-O2CCH3)* are investigated using density functional theory (DFT). The experimental demonstrations are performed on Si substrates over the growth temperature range 75-400 degrees C. Consistent with the DFT simulation, lower linear growth rate and shorter required oxidant purge times are observed at 90 degrees C, when compared to LT-ALD Al2O3 using H2O as the oxidant. The chemical characteristics of the Al2O3 films grown with both CH3COOH at 90 degrees C and H2O at 100 degrees C are determined and compared using X-ray photoelectron spectroscopy (XPS).
Resolving The Evolution Of Atomic Layer-Deposited Thin-Film Growth By Continuous In Situ X-Ray Absorption Spectroscopy

Xiaohui Qu,Danhua Yan,Ruoshui Li,Jiajie Cen,Chenyu Zhou,Wenrui Zhang,Deyu Lu,Klaus Attenkofer,Dario J. Stacchiola,Mark S. Hybertsen,Eli Stavitski,Mingzhao Liu

DOI: https://doi.org/10.1021/acs.chemmater.0c04547

IF: 10.508

2021-01-01

Chemistry of Materials

Abstract:In situ synchrotron X-ray absorption near-edge structure characterization of thin-film titania growth by atomic layer deposition (ALD) over ZnO nanowires reveals persistent low-coordinated Ti motifs leading to a new picture of ALD growth. Through the design of growth and measurement cycles, Ti K-edge spectral data are continuously recorded so as to characterize the film evolution as a function of ALD cycle number and the surface changes within the time scale of the ALD cycle. A unified set of analysis tools is developed to interpret the time-series of spectral data. A prenucleation stage of growth, a transition region, and then a steady-state growth stage are observed with distinguishable features. Multivariate curve resolution analysis, that is physically constrained, demonstrates two specific spectral components with associated, time-dependent concentrations. The bulk-film component tracks the stages of growth. The surface and interface components, present throughout the stages of growth, reveal a significant coverage of relatively isolated or loosely networked tetrahedrally coordinated Ti atomic motifs. Finally, spectral signatures for the intra-cycle growth kinetics are reconstructed at a time resolution of similar to 1 s and demonstrate that the transient Ti motifs on the growing surface stabilize within a few seconds of the Ti precursor pulse.
Deposition Mechanism and Characterization of Plasma-Enhanced Atomic Layer-Deposited SnOx Films at Different Substrate Temperatures

Pao-Hsun Huang,Zhi-Xuan Zhang,Chia-Hsun Hsu,Wan-Yu Wu,Sin-Liang Ou,Chien-Jung Huang,Dong-Sing Wuu,Shui-Yang Lien,Wen-Zhang Zhu

DOI: https://doi.org/10.3390/nano12162859

IF: 5.3

2022-08-19

Nanomaterials

Abstract:The promising functional tin oxide (SnOx) has attracted tremendous attention due to its transparent and conductive properties. The stoichiometric composition of SnOx can be described as common n-type SnO2 and p-type Sn3O4. In this study, the functional SnOx films were prepared successfully by plasma-enhanced atomic layer deposition (PEALD) at different substrate temperatures from 100 to 400 °C. The experimental results involving optical, structural, chemical, and electrical properties and morphologies are discussed. The SnO2 and oxygen-deficient Sn3O4 phases coexisting in PEALD SnOx films were found. The PEALD SnOx films are composed of intrinsic oxygen vacancies with O-Sn4+ bonds and then transformed into a crystalline SnO2 phase with increased substrate temperature, revealing a direct 3.5–4.0 eV band gap and 1.9–2.1 refractive index. Lower ( 300 °C) substrate temperatures can cause precursor condensation and desorption, respectively, resulting in reduced film qualities. The proper composition ratio of O to Sn in PEALD SnOx films near an estimated 1.74 suggests the highest mobility of 12.89 cm2 V−1 s−1 at 300 °C.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Room temperature atomic layer deposition of zinc titanium oxide using sequential adsorption of dimethyl zinc and tetrakis(dimethylamino)titanium

Haruto Suzuki,Ryo Miyazawa,Masanori Miura,Bashir Ahmmad,Fumihiko Hirose,Fumihiko HIROSE

DOI: https://doi.org/10.35848/1347-4065/ad33f1

IF: 1.5

2024-03-14

Japanese Journal of Applied Physics

Abstract:Abstract Complex oxide films of TiO2 and ZnO are deposited by room-temperature atomic layer deposition (ALD) with a sequential adsorption process. In this ALD, we use a Zn precursor of dimethyl zinc (DMZ) and a Ti precursor of tetrakis(dimethyl)aminotitanium (TDMAT). In the sequential adsorption step, the DMZ saturation on the surface is followed by a partial adsorption of TDMAT. It is assumed that the TDMAT molecule is adsorbed on the DMZ uncovered area. The mixed layer of DMZ and TDMAT is formed in the adsorption step, followed by being oxidized with the plasma excited humidified Ar. All the ALD processes are performed at room temperature without any sample heating in the ALD chamber. The growth per cycle of the oxide film deposition is recorded at 0.086 nm/cycle for the balanced Zn and Ti oxide deposition. The mixing ratio of Zn and Ti is controlled by the TDMAT exposure in the adsorption step. In this study, the reaction model and the related rate equations to calculate the mixing concentration ratio are proposed based on the in-situ observation of the surface reaction by IR absorption spectroscopy.

physics, applied
Role of the Oxidizing Co-Reactant in Pt Growth by Atomic Layer Deposition Using MeCpPtMe 3 and O 2 /O 3 /O 2 -Plasma

Jin Li,Sylwia Klejna,Matthias M. Minjauw,Jolien Dendooven,Christophe Detavernier

DOI: https://doi.org/10.1021/acs.jpcc.3c07568

2024-01-31

The Journal of Physical Chemistry C

Abstract:Atomic layer deposition (ALD) of Pt using MeCpPtMe3 and the O2/O3/O2-plasma (O2*) at 300 °C is investigated with in vacuo X-ray photoelectron spectroscopy (XPS) and density functional theory (DFT) to gain a better understanding of the Pt growth mechanism. Most notably, the chemical state of the surface Pt atoms and the role of surface O species in Pt growth are revealed. In the MeCpPtMe3/O2 process, the surface Pt atoms remain in a metallic Pt0 state throughout the ALD cycle, and the surface O species generated by the O2 exposure only exist as unstable adatoms, desorbing in vacuum. As for the O3/O2* processes, the surface Pt layer is oxidized to a mixture of Pt0, Pt2+O and Pt4+O2 upon O3/O2* exposure and then fully reduced to Pt0 during the precursor exposure. Surface Pt oxides are stable in a vacuum but can be reduced by hydrocarbon vapors. Quantification analysis shows that the O3/O2* processes have a much higher surface O species content than the O2 process after the coreactant exposure, favoring precursor ligand combustion over dehydrogenation in the next precursor exposure and leading to lower surface C density after the precursor pulse. DFT reveals differences in the combustion mechanism for Me vs Cp species, during the metal precursor and coreactant pulses. Importantly, the differences in the surface O content do not significantly affect the growth per cycle. Moreover, the MeCpPtMe3/O2 process with surface O species and a tailored MeCpPtMe3/O2 process without surface O species, both at 300 °C, yield nearly identical growth rates and as-deposited Pt with the same chemical state. This indicates that surface O species present before the precursor exposure have little impact on the overall Pt growth, in contrast to a previous assumption.

chemistry, physical,nanoscience & nanotechnology,materials science, multidisciplinary
The Mechanistic Effect over the Substrate in a Square Type Atomic Layer Deposition Reactor

Rigardt Alfred Maarten Coetzee,Tien-Chien Jen,Muaaz Bhamjee,Junling Lu

DOI: https://doi.org/10.1142/s0217979219400186

2019-01-01

Abstract:The attractive key-enabling nanotechnology manufacturing technique of atomic layer deposition (ALD) is well-known to deposit ultra-thin, uniform, conformal and pinhole-free nano-films on complex topography. Over the years it has been used to deposit ultra-thin films in a multitude of industry applications such as microelectronics, solar cells, superconductors, fuel cells, and water purification membranes, among other applications. This study investigates the ALD process effects in the fabrication of Al2O3 thin film over the substrate. The mass fraction coverage over the substrate and deposition rate contours in a Gemstar 6 ALD reactor are examined. The analysis technique illustrates the parameter behavior over a Cartesian coordinate sector in a three-dimensional illustration. The governing laws of the conservation of mass, momentum, energy, species, and kinetic chemical reactions are analyzed numerically by ANSYS Fluent and ChemkinPro. The deposition rate profiles correlated with previous experimental findings in the literature, producing an average growth rate of 1.3 Å/cycles.
Spatial Atomic Layer Deposition of Zno/Tio2 Nanolaminates

Rong Chen,Ji-Long Lin,Wen-Jie He,Chen-Long Duan,Qi Peng,Xiao-Lei Wang,Bin Shan

DOI: https://doi.org/10.1116/1.4955289

2016-01-01

Abstract:Spatial atomic layer deposition (S-ALD) is a potential high-throughput manufacturing technique offering fast and large scale ultrathin films deposition. Here, an S-ALD system with modular injectors is introduced for fabricating binary oxides and their nanolaminates. By optimizing the deposition conditions, both ZnO and TiO2 films demonstrate linear growth and desired surface morphology. The as-deposited ZnO film has high carrier mobility, and the TiO2 film shows suitable optical transmittance and band gap. The ZnO/TiO2 nanolaminates are fabricated by alternating substrate movement between each S-ALD modular units of ZnO and TiO2. The grazing incidence x-ray diffraction spectra of nanolaminates demonstrating the signature peaks are weaker for the same thickness nanolaminates with more bilayers, suggesting tuning nanolaminates from crystalline to amorphous. Optical transmittances of ZnO/TiO2 laminates are enhanced with the increase of the bilayers' number in the visible range. Refractive indices of nanolaminates increase with the thickness of each bilayer decreasing, which demonstrates the feasibility of obtaining desired refractive indices by controlling the bilayer number. The electronic properties, including mobility, carrier concentration, and conductivity, are also tunable with different bilayers. (C) 2016 American Vacuum Society.
Interfacial Catalysis in and Initial Reaction Mechanism of Al2o3 Films Fabricated by Atomic Layer Deposition Using Non-Hydrolytic Sol-Gel Chemistry

Lina Xu,Guoyong Fang,Yanqiang Cao,Aidong Li

DOI: https://doi.org/10.1039/c6cp05842f

2016-01-01

Abstract:Atomic layer deposition (ALD) is a powerful nanofabrication technique that can precisely control the composition, structure, and thickness of thin films at the atomic scale, and is widely used in the fields of electronic displays, microelectronics, catalysis, coatings, and energy storage and conversion. ALD of metal oxide thin films can be completed using metal alkoxides as the oxygen source, which is similar to the non-hydrolytic sol-gel (NHSG) technique. Density functional theory calculations show that metal alkoxides, such as Al(OiPr)3 and Al(OEt)3, can directly form M-O bonds through strong chemisorption on the surface. Meanwhile, alkyl groups can be eliminated through the formation of alkyl halides and alkenes, which can be catalyzed by interfacial interactions between alkyl groups and the surface. Such noncovalent catalysis resulting from interfacial interaction can be termed as interfacial catalysis. This can be characterized by the difference between the interfacial interaction energies of the transition state and the corresponding intermediate based on natural bond analysis. We expect that such interfacial catalysis can be used in precursor designs, improvement of ALD of oxides and as a new characterization method for other interfacial catalysis and noncovalent catalysis processes.
Characterizing the Stability of Ultra-Thin Metal Oxide Catalyst Films in Non-thermal Plasma CO2 Reduction Reactions

Robert Coridan,Samuel Conlin,Joseph Joel Muhanga,David Parette

DOI: https://doi.org/10.26434/chemrxiv-2024-k0svz

2024-10-18

Abstract:The use of metal oxide catalysts to enhance plasma CO2 reduction has seen significant recent development towards processes to reduce greenhouse gas emissions and produce renewable chemical feedstocks. While plasma reactors are effective at producing the intended chemical transformations, the conditions can result in catalyst degradation. Atomic layer deposition (ALD) can be used to synthesize complex, hierarchically structured metal oxide plasma catalysts that, while active for plasma CO2 reduction, are particularly vulnerable to degradation due to their high surface area and nanoscopic thickness. In this work, we characterized the effects of extended non-thermal, glow-discharge plasma exposure on ALD synthesized, ultra-thin film (< 30 nm) TiO2 and ZnO catalysts. We used x-ray diffraction, reflectivity, and spectroscopy to compare films exposed to a CO2 plasma to ones exposed to an Ar plasma and to ones annealed in air. We found that the CO2 plasma exposure generated some surface reduction in TiO2 and increased surface roughening by a small amount, but did not initiate any phase changes or crystallite growth. The results suggest that ALD-deposited metal oxide films are robust to low pressure CO2 plasma exposure and are suitable as catalysts or catalyst supports in extended reactions.

Chemistry
Atomic layer deposition of chromium oxide—An interplay between deposition and etching

Bireswar Mandol,Neha Mahuli,Kenichi Ohno,Lance Scudder,Shaibal K. Sarkar

DOI: https://doi.org/10.1116/6.0000896

2021-05-01

Abstract:Atomic layer deposition (ALD) of chromium oxide (Cr2O3) thin films is investigated in a custom built hot wall viscous flow reactor configuration at 300 °C. Chromium(III) 2,4-pentanedionate [Cr(acac)3] and ozone (O3) are employed as the metal and the oxygen sources, respectively. In situ quartz crystal microbalance (QCM) and ex situ x-ray reflectivity studies are utilized as the two complementary techniques to monitor the growth mechanism and self-limiting deposition chemistry during Cr2O3 ALD. In situ QCM studies reveal a negligible nucleation period on the previously grown Al-OH* terminated surface before revealing the perfectly linear growth mechanism at 300 °C. The saturated growth rate is found to be ca. 0.28 Å/cycle. In addition, excessive O3 exposure also reveals an alternative, controlled, and spontaneous etching pathway of the growing film as a result of the partial surface oxidation of Cr2O3. The as-deposited thin films are found to exhibit a polycrystalline rhombohedral structure without any preferential orientation. X-ray photoelectron spectroscopy studies reveal uniform distribution of Cr and O throughout the stack of ca. 40 nm film with minimum C impurities. High resolution scans of Cr 2p core level also confirm the presence of Cr in the +3 oxidation state with the corresponding multiplet spectrum.
Atomic Layer Deposition of Tio2 from Tetrakis-Dimethyl-Amido Titanium or Ti Isopropoxide Precursors and H2o

Qi Xie,Yu-Long Jiang,Christophe Detavernier,Davy Deduytsche,Roland L. Van Meirhaeghe,Guo-Ping Ru,Bing-Zong Li,Xin-Ping Qu

DOI: https://doi.org/10.1063/1.2798384

IF: 2.877

2007-01-01

Journal of Applied Physics

Abstract:Atomic layer deposition (ALD) of TiO2 thin films using Ti isopropoxide and tetrakis-dimethyl-amido titanium (TDMAT) as two kinds of Ti precursors and water as another reactant was investigated. TiO2 films with high purity can be grown in a self-limited ALD growth mode by using either Ti isopropoxide or TDMAT as Ti precursors. Different growth behaviors as a function of deposition temperature were observed. A typical growth rate curve-increased growth rate per cycle (GPC) with increasing temperatures was observed for the TiO2 film deposited by Ti isopropoxide and H2O, while surprisingly high GPC was observed at low temperatures for the TiO2 film deposited by TDMAT and H2O. An energetic model was proposed to explain the different growth behaviors with different precursors. Density functional theory (DFT) calculation was made. The GPC in the low temperature region is determined by the reaction energy barrier. From the experimental results and DFT calculation, we found that the intermediate product stability after the ligand exchange is determined by the desorption behavior, which has a huge effect on the width of the ALD process window.

FDA warns on primate xenotransplants

Reversible Low-Temperature Metal Node Distortion During Atomic Layer Deposition of Al2o3 and Tio2 on Uio-66-Nh2 Metal-Organic Framework Crystal Surfaces

Tin oxide atomic layer deposition from tetrakis(dimethylamino)tin and water

Meet-in-the-Middle Preimage Attacks on Hash Modes of Generalized Feistel and Misty Schemes with SP Round Function

Theoretical study on tin oxide surface chemistry mechanism and thermodynamic properties for atomic layer deposition equipment optimization

Mixed Tin-Titanium Oxides by Atomic Layer Deposition on Planar Substrates: Physical and Electronic Structure

Surface Reaction Kinetics for Inherent Selective Atomic Layer Deposition of Tantalum Oxide

In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3

Effect of Co-Reactants on Interfacial Oxidation in Atomic Layer Deposition of Oxides on Metal Surfaces

Molecular Mechanism of Selective Al2O3 Atomic Layer Deposition on Self-Assembled Monolayers

A Water‐free Low Temperature Process for Atomic Layer Deposition of Al2O3 Films

Resolving The Evolution Of Atomic Layer-Deposited Thin-Film Growth By Continuous In Situ X-Ray Absorption Spectroscopy

Deposition Mechanism and Characterization of Plasma-Enhanced Atomic Layer-Deposited SnOx Films at Different Substrate Temperatures

Room temperature atomic layer deposition of zinc titanium oxide using sequential adsorption of dimethyl zinc and tetrakis(dimethylamino)titanium

Role of the Oxidizing Co-Reactant in Pt Growth by Atomic Layer Deposition Using MeCpPtMe 3 and O 2 /O 3 /O 2 -Plasma

The Mechanistic Effect over the Substrate in a Square Type Atomic Layer Deposition Reactor

Spatial Atomic Layer Deposition of Zno/Tio2 Nanolaminates

Interfacial Catalysis in and Initial Reaction Mechanism of Al2o3 Films Fabricated by Atomic Layer Deposition Using Non-Hydrolytic Sol-Gel Chemistry

Characterizing the Stability of Ultra-Thin Metal Oxide Catalyst Films in Non-thermal Plasma CO2 Reduction Reactions

Atomic layer deposition of chromium oxide—An interplay between deposition and etching

Atomic Layer Deposition of Tio2 from Tetrakis-Dimethyl-Amido Titanium or Ti Isopropoxide Precursors and H2o