Abstract:Atomic layer deposition (ALD) is a thin film technology with high potential in nano fabrication. There is industrial demand to produce an ALD–TiO2 thin film using a low temperature process for applications of bending electronic devices and biomaterials. TDMAT has gained the most attention as a suitable titanium source to grow an ALD–TiO2 film at extremely low temperatures. In this process, almost all published reports have focused on metal-oxide precursors. The current work investigates the effects of oxidizing agents. For the first time, a theoretical investigation was carried out on the oxidation of H2O2 and H2O on TDMAT absorbed on a silicon (100) surface during the reaction step of the ALD–TiO2 process. We simulated the oxidation process, which continued from the adsorption step of the ALD–TiO2 process, where the TDMAT was used as a titanium precursor. The cluster of the Si9H12 =O2 =Ti[N(CH3)]2 surface model was used to represent the remaining TDMAT molecule absorbed on the Si(100) substrate. The reaction mechanisms of H2O2 oxidizing on this surface were evaluated based on their reaction pathways. The reaction pathway of H2O oxidizing on this surface was calculated at the same level to compare the effect of oxidizers. The DFT at the B3LYP 6–311 G+ (2d,p) and 6–31 G(d,p) theoretical levels were used to calculate the potential energy surface and to optimize the electronic structures in this process. It was found that the reaction mechanism depended on the nature of chemical bond dissociation within the oxidizer molecules during the oxidation process. In the oxidation of H2O2, the H2O2 molecule contained O–O and O–H bonds, which were dissociated during the oxidation process, resulting in different product structures. Only the O–O bond dissociation pathway produced the TiO2 structure. The two species of TDMAT ligands at the surface were completely oxidized using a single H2O2 molecule. The H2O2 oxidation produced more –OH groups (double) compared to H2O oxidation. In H2O oxidation, the H2O molecule contained only the O–H bond within its molecule and required activation energies significantly less than for all pathways of H2O2. The HOMO–LUMO properties and IR frequency characteristics (cm−1) of the plausible product structures were discussed. The results should be useful in guiding the selection of suitable precursors for use in the co–reactant system of the ALD–TiO2 process.

Atomic Layer Deposition of Tio2 from Tetrakis-Dimethyl-Amido Titanium or Ti Isopropoxide Precursors and H2o

Growth kinetics and crystallization behavior of TiO2 films prepared by plasma enhanced atomic layer deposition

Initial Surface Reactions Mechanisms of Atomic Layer Deposition Tio2 Using Ti(Och3)(4) and H2o As Precursors

Liquid Injection Atomic Layer Deposition of Crystalline TiO[sub 2] Thin Films with a Smooth Morphology from Ti(O-i-Pr)[sub 2](dpm)[sub 2]

Initial Surface Reactions Mechanisms of Atomic Layer Deposition TiO<sub>2</sub><sub> </sub>Using Ti(OCH<sub>3</sub>)<sub>4</sub> and H<sub>2</sub>O as Precursors

Crystalline as-deposited TiO 2 anatase thin films grown from TDMAT and water using thermal atomic layer deposition with in situ layer-by-layer air annealing

Initial Surface Reactions Mechanisms Of Atomic Layer Deposition Tio2 On H/Si(100)-2x1 Surface

Atomic layer deposition of TiO2 on mesoporous silica

A Water‐free Low Temperature Process for Atomic Layer Deposition of Al2O3 Films

Comparison of H2O2 and H2O oxidations on TDMAT absorbed on silicon(100) surface during reaction step of ALD–TiO2 process: A DFT study

Ultrasonic Atomization of Titanium Isopropoxide at Room Temperature for TiO2 Atomic Layer Deposition

Initial Growth Mechanisms of ZrO2 and TiO2 Thin Films Using Cycloheptatrienyl–cyclopentadienyl Heteroleptic Precursors: A Comparative Study by Density Functional Theory

H2O-based Atomic Layer Deposition Mechanism of Aluminum Oxide Using Trimethylaluminum

Study of the surface species during thermal and plasma-enhanced atomic layer deposition of titanium oxide films using in situ IR-spectroscopy and in vacuo X-ray photoelectron spectroscopy

A theoretical study on the surface reaction of tetrakis(dimethylamino)titanium on titanium oxide

The Growth Mechanisms of TiO2 Film Onto PET Surfaces by Atomic Layer Deposition

Atomic Layer Deposition of In2O3:H from InCp and H2O/O2: Microstructure and Isotope Labeling Studies

Interface Engineering of TiO2 Photoelectrode Coatings Grown by Atomic Layer Deposition on Silicon

Quantum Chemical Study of the Initial Surface Reactions in Atomic Layer Deposition of TiN on the SiO(2) Surface.

Surface Acidity and Properties of TiO2/SiO2 Catalysts Prepared by Atomic Layer Deposition: UV−visible Diffuse Reflectance, DRIFTS, and Visible Raman Spectroscopy Studies

Data set for fabrication of conformal two-dimensional TiO2 by atomic layer deposition using tetrakis (dimethylamino) titanium (TDMAT) and H2O precursors