Abstract:Metal organic frameworks (MOFs) are a class of three-dimensional porous architectures that can be chemically functionalized. The ability of atomic layer deposition (ALD) to incorporate metal atoms or functional groups into MOFs offers an interesting alternative to chemically modify MOFs for applications such as catalysis and gas separation, for which transport, adsorption, and the reaction of gases are critical. Optimization of these deposition processes requires an understanding of the underlying reaction mechanisms that is best derived from in situ characterization. We have therefore combined in situ infrared spectroscopy, X-ray photoelectron spectroscopy with in situ sputtering, and ab initio calculations to elucidate the reaction mechanisms of the common ALD precursors trimethylaluminium (TMA), diethylzinc (DEZ), and TiCl4 with several Zr-MOFs containing hydroxyl (OH) and water (H2O) groups. Focusing on the OH and H2O groups is particularly revealing because it makes it possible to explore the reactivity dependence on the chemical and structural (i.e., sterics) environments. We find that the reactivity of the OH groups in the Zr-6(mu(3)-OH)4(mu(3)-O)(4)(OH)(x)(OH2)y cluster node is highly dependent on their location, accessibility, and chemical environment. For instance, the activation temperature for the reaction of the OH groups of Zr-6 clusters with TMA decreases with the node connectivity: 200, 150, and 24 degrees C for UiO-66-NH2, Zr-abtc, and MOF-808, respectively. Interestingly, the hydroxyl groups in unfunctionalized UiO-66 do not react with TMA molecules. Ab initio calculations reveal that the NH2 group is directly responsible for catalyzing this reaction by anchoring the TMA molecule in close proximity to the target OH group. Finally, we show that TMA easily reacts with water adsorbed on the external surfaces of wet MOF crystals at room temperature, forming a thick Al2O3 blocking layer on the periphery of the MOF crystals. These findings provide a basis for the design and modification of MOFs by ALD processes.

H2O-based Atomic Layer Deposition Mechanism of Aluminum Oxide Using Trimethylaluminum

H 2 O-based atomic layer deposition mechanism of aluminum oxide using trimethylaluminum

Atomic layer deposition mechanism of hafnium dioxide using hafnium precursor with amino ligands and water

Optical Properties of Al 2 O 3 Thin Film Fabricated by Atomic Layer Deposition

Metal-organic Chemical Vapor Deposition of Aluminium Oxynitride from Propylamine–dimethylaluminium Hydride and Oxygen: Growth Mode Dependence and Performance Optimization

Exploring TMA and H2O Flow Rate Effects on Al2O3 Thin Film Deposition by Thermal ALD: Insights from Zero-Dimensional Modeling

A Water‐free Low Temperature Process for Atomic Layer Deposition of Al2O3 Films

First-Principles Predictions and in Situ Experimental Validation of Alumina Atomic Layer Deposition on Metal Surfaces

Reaction mechanism of atomic layer deposition of aluminum sulfide using trimethylaluminum and hydrogen sulfide

Initial Surface Reactions in Atomic Layer Deposition of Al2O3on the Hydroxylated GaAs(001)-4 × 2 Surface

Design and Self-catalytic Mechanism of Aluminum Precursors Bearing Amino Ligands for Al2S3 Atomic Layer Deposition

Atomic Layer Deposition of Hafnium Oxide from Tetrakis(ethylmethylamino)hafnium and Water Precursors

Initial Surface Reactions Mechanisms of Atomic Layer Deposition TiO<sub>2</sub><sub> </sub>Using Ti(OCH<sub>3</sub>)<sub>4</sub> and H<sub>2</sub>O as Precursors

Stepwise Mechanism and H2o-Assisted Hydrolysis in Atomic Layer Deposition of Sio2 Without A Catalyst

A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films

Initial Surface Reactions Mechanisms of Atomic Layer Deposition Tio2 Using Ti(Och3)(4) and H2o As Precursors

Reactivity of Atomic Layer Deposition Precursors with OH/H2O-Containing Metal Organic Framework Materials

Water Dose influence to the ALD hafnium oxide process: simulation and experiment

Interfacial Catalysis in and Initial Reaction Mechanism of Al2o3 Films Fabricated by Atomic Layer Deposition Using Non-Hydrolytic Sol-Gel Chemistry

Atomic Layer Deposition of Hafnium Oxide from Hafnium Chloride and Water

Atomic Layer Deposition of Tio2 from Tetrakis-Dimethyl-Amido Titanium or Ti Isopropoxide Precursors and H2o