H 2 O-based atomic layer deposition mechanism of aluminum oxide using trimethylaluminum

Yingying Wang,Jiayi Guo,Chenqi Bai,Lina Xu,Hongping Xiao,Qian Shi,Yihong Ding,Aidong Li,Guoyong Fang
DOI: https://doi.org/10.1016/j.susc.2024.122580
IF: 1.9
2024-08-25
Surface Science
Abstract:As a nanofabrication technology, atomic layer deposition (ALD) has been widely used in the fields of displays, microelectronics, nanotechnology, catalysis, energy and coatings. It demonstrates excellent conformality, large-area uniformity and precise control of the sub-monolayer film. Al 2 O 3 ALD using trimethylaluminum (TMA) and water (H 2 O) as precursors is the most ideal ALD model system. In this work, the reactions of TMA and H 2 O with the surface have been investigated using density functional theory (DFT) calculations in order to obtain more information on the reaction mechanism of the complicated H 2 O-based ALD of Al 2 O 3 . In the TMA reaction, the methyl ligands can be eliminated and new Al-O bonds can be formed via ligand exchange reactions. In the H 2 O reaction, the methyl ligand on the surface can be further eliminated and new AlO bonds can be formed. Meanwhile, the coupling reactions between the surface methyl and hydroxyl groups can further form new AlO bonds and release CH 4 or H 2 O to densify the Al 2 O 3 film. These complicated reaction mechanisms of Al 2 O 3 H 2 O-based ALD can provide theoretical guidance for the precursor design and ALD growth of other oxides and aluminum-based compounds.
chemistry, physical,physics, condensed matter
What problem does this paper attempt to address?