Abstract:Titanium silicide (TiSi2) thin films were prepared on glass substrate by atmospheric pressure chemical vapor deposition using SiH4 and TiCl4 as the precursors. The phase structure of the thin films was identified by x-ray diffractometry. The surface morphology and thickness of the thin films were observed by field emission scannig electron microscopy and the sheet resistance of the thin films was measured using the four point probe method. The results show that the TiSi2 thin films are formed in a face-centered orthorhombic structure. Due to the influence of the amorphous glass substrate, an amorphous layer is initially formed on the substrate and the TiSi2 crystalline phase grows on top of it. As the thickness and content of TiSi2 crystalline phase increase with deposition time, the resistivity of the thin film decreases. Besides, the growth rate and thus the size of TiSi2 crystalline phase increase as the deposition temperature increases. The stack density decreases when the deposition temperature increases above 700°C because the rapid growth at the higher temperatures causes more irregular shape of crystalline particles. The maximal stack density of the crystalline phase and thus the minimum resistivity of the thin films are obtained at the deposition temperature of 700°C. The expressions of the stack density of crystalline phase and the resistivity of the thin films as functions of the deposition conditions are theoretically deduced which are well consistent with the experimental results.

Atomic layer deposition of TiO2 on mesoporous silica

PREPARATION OF NANO TiO2 ON SURFACE OF SILICA

Preparation of TiO2 nanoparticles on the surface of SiO2 in binary liquids

Reaction of tetrabutyl titanate in the adsorption layer on Si02 surface

Confined Interfacial Monomicelle Assembly for Precisely Controlled Coating of Single-Layered Titania Mesopores

Structural and Optical Characteristics of TiO2 Nanoparticles-Containing Mesoporous Silica (SBA-15) Thin Films

Direct Synthesis and Structural Characteristics of Titanium Dioxide/Mesoporous SBA-15 Materials

Atomic Layer Deposition of Tio2 from Tetrakis-Dimethyl-Amido Titanium or Ti Isopropoxide Precursors and H2o

Incorporation of Titanium into Mesoporous Silica Molecular Sieve SBA-15

Fabrication of Titanium Dioxide Thin Films by DBD-CVD under Atmosphere

Preparation of Large-Pore Mesoporous Nanocrystalline TiO2 Thin Films with Tailored Pore Diameters

Synthesis of easily shaped ordered mesoporous titanium-containing silica

Synthesis of Ti-containing mesoporous silicates from inorganic titanium sources

Surface Acidity and Properties of TiO2/SiO2 Catalysts Prepared by Atomic Layer Deposition: UV−visible Diffuse Reflectance, DRIFTS, and Visible Raman Spectroscopy Studies

Tunable Growth of TiO2 Nanostructures on Ti Substrates

Atomic layer deposition-based tuning of the pore size in mesoporous thin films studied by in situ grazing incidence small angle x-ray scattering

Controllable Architecture of Mesoporous Double-Nanoshell SiO2/TiO2 Hollow Tube Based on Layer by Layer Method

Unfolding an Elusive Area-Selective Deposition Process: Atomic Layer Deposition of TiO 2 and TiON on SiN vs SiO 2

Ultrasonic Atomization of Titanium Isopropoxide at Room Temperature for TiO2 Atomic Layer Deposition

Nucleation and Growth of Tisi2 Thin Films Deposited on Glass by Atmospheric Pressure Chemical Vapor Deposition

Characterization of Ti/SBA-15 Composites Synthesized by Chemical Vapour Deposition of Organic Titanium Compounds