Abstract:The chemical principal and mechanisms that enable selective atomic layer depositions are gaining rapid growing interests, which have unlocked attractive avenues for the development of novel nanostructures by depositing atoms at desired surface locations. It has found versatile applications in emerging fields beyond semiconductor industry. Yet with the continuing downscaling, it is important to expand approaches for selective ALD with atomic scale precision on nanoscale features. The self-driven selective growth is needed, modifying specific surface down to atoms, to enable unprecedented capability of tuning the structure-property relationship for emerging applications. In this talk, the inherently selective atomic layer deposition processes will be discussed. Previously, we have demonstrated facet-selective ALD processes, which based on intrinsic differences of precursors chemisorption on terraces or step edges of nanoparticles. To expand the inherently ASD, the acidity and alkaline, surface electronegativity, lattice strains could be exploited to achieve this inhibitor-free selective deposition process. Tantalum oxide was studied on a series of oxide substrates. Although the oxides have -OH groups on the surface and proposed to have similar nucleation sites, there are long nucleation delays on basic oxides. The H-transfer reaction is a key factor to influence the reaction barrier. It is hard to nucleate on basic substrates because the H-transfer reaction is blocked. Another demonstration is the redox-coupled inherently selective ALD for self-alignment of tantalum oxide on SiO 2 /Cu nanopatterns. By adding an in-situ ethanol reduction pulse before each traditional binary ALD cycle, and the ‘reduction-adsorption-oxidation’ ALD process increases the selectivity. Self-aligned manufacturing on nanoscale Cu/SiO 2 patterns without excessive mushroom growth at the edge and undesired nucleation defects on the Cu region. The process can be reliably repeated to yield more than 5 nm-thick Ta 2 O 5 on the SiO 2 region, while no undesired deposition occurs on Cu patterns. In addition, an anisotropic growth model with the dynamical competition of expansion and dissociation of the nucleus is proposed to nucleation delay are quantitively predicted and the model provides a practical method to evaluate the selectivity of ALD theoretically. It provides a new strategy for inherently selective ALD, which will expand the selective toolbox of nanofabrication for next-generation nanoelectronic applications.

Effect of Co-Reactants on Interfacial Oxidation in Atomic Layer Deposition of Oxides on Metal Surfaces

Reversible Low-Temperature Metal Node Distortion During Atomic Layer Deposition of Al2o3 and Tio2 on Uio-66-Nh2 Metal-Organic Framework Crystal Surfaces

Interfacial Catalysis in and Initial Reaction Mechanism of Al2o3 Films Fabricated by Atomic Layer Deposition Using Non-Hydrolytic Sol-Gel Chemistry

Atomic Layer Deposition of Noble Metals – New Developments in Nanostructured Catalysts

Reactivity of Atomic Layer Deposition Precursors with OH/H2O-Containing Metal Organic Framework Materials

First-Principles Predictions and in Situ Experimental Validation of Alumina Atomic Layer Deposition on Metal Surfaces

Studying the Atomic Layer Deposition of Molybdenum Oxide and Titanium–Molybdenum Oxide Films Using Quartz Crystal Microbalance

H2O-based Atomic Layer Deposition Mechanism of Aluminum Oxide Using Trimethylaluminum

The Mechanistic Effect over the Substrate in a Square Type Atomic Layer Deposition Reactor

Exploring TMA and H2O Flow Rate Effects on Al2O3 Thin Film Deposition by Thermal ALD: Insights from Zero-Dimensional Modeling

A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films

H 2 O-based atomic layer deposition mechanism of aluminum oxide using trimethylaluminum

A Water‐free Low Temperature Process for Atomic Layer Deposition of Al2O3 Films

Initial Surface Reactions in Atomic Layer Deposition of Al2O3on the Hydroxylated GaAs(001)-4 × 2 Surface

Atomic layer deposition of chromium oxide—An interplay between deposition and etching

Reaction Mechanisms of the Atomic Layer Deposition of Tin Oxide Thin Films Using Tributyltin Ethoxide and Ozone

Surface Reaction Kinetics for Inherent Selective Atomic Layer Deposition of Tantalum Oxide

The surface chemistry of the atomic layer deposition of metal thin films

Theoretical study on tin oxide surface chemistry mechanism and thermodynamic properties for atomic layer deposition equipment optimization

(Invited) Surface Thermolysis of ALD Precursors and Its Implications for Deposition