Abstract:Atomic layer deposited TiN thin films on SiO2/Si for Through Silicon Via applications were investigated in this paper. TiCl4 and NH3 were used as the source and reactant gases, respectively. The thin films were deposited at the temperature range between 350 degrees C and 500 degrees C.Difference analysis methods, including AES, XRD, four-point probe and ellipsometer were employed to evaluate the properties of deposited TiN films. The measured deposition rate of TiN films is about 0.15 angstrom/cycle, independent from the process condition, which indicates the growth mechanism of ALD. Resistivity of deposited thin films was measured by a four-point probe and the relationship between the resistivity and deposition temperature was investigated. Resistivity of the films is less than 125 mu Omega.cm when deposition temperature is above 400 degrees C, which decreases when the deposition temperature increases, as well as the film thickness. TiN film was grown with [100] preferred orientation at 350 degrees C, while with [111] preferred orientation at 400 degrees C and higher temperatures. Chemical composition was analyzed by AES, the content of chorine in TiN films is about 1.5 at. % at the deposition temperature of 350 degrees C, and it decrease to 0.5 at. % when the deposition temperature is above 350 degrees C.In order to investigate the performance of TiN as diffusion barrier layer, the structure of Cu/TiN/SiO2/Si was prepared. Annealing of the samples were performed in a vacuum ambient of 10(-5) Pa at selected temperatures for 1h. XRD analysis results indicate that no copper diffusion into the SiO2 for Si with Cu/TiN/SiO2 films after annealing below 500 degrees C.

The Effect of Deposition Temperature of TiN Thin Film Deposition Using Thermal Atomic Layer Deposition

Characteristics of TiN thin films grown by ALD using TiCl4 and NH3

The effect of NH3 plasma pulse time on atomic layer-deposited TiN films using tetrakis-(dimethylamino) titanium as a metal precursor

Properties and morphology of TiN films deposited by atomic layer deposition

The Effect of Deposition Temperature on TiN Thin Films for the Electrode Layer of 3D Capacitors Prepared by Atomic Layer Deposition

AFM Study on the Surface Morphologies of TiN Films Prepared by Magnetron Sputtering and Al2O3 Films Prepared by Atomic Layer Deposition

Low Temperature Deposition of TiN Using Tetrakis(dimethylamido)‐Titanium in an Electron Cyclotron Resonance Plasma Process

The physical properties of cubic plasma-enhanced atomic layer deposition TaN films

Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition

Effects of the Deposition Temperature on the Structure and Solar Control Performance of Tin Coatings Prepared by Apcvd

TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition

Properties of TiN films deposited by atomic layer deposition for through silicon via applications

Atomic Layer Deposition Tin Barrier Layers For Through Silicon Via Applications

Temperature Effect on the Growth Rate and Physical Characteristics of SnO2 Thin Films Grown by Atomic Layer Deposition

Study of optical and electrical properties of TiN thin films prepared by cathodic ion sputtering

Effect of Deposition Temperature on Al2O3 Films Deposited by Atomic Layers Deposition

Stability of NiCrAlY coating/titanium alloy system under pure thermal exposure

Growth of conformal TiN thin film with low resistivity and impurity via hollow cathode plasma atomic layer deposition

Investigation of deposition parameters on the structural properties and hardness of TiAlN films deposited via reactive pulsed DC magnetron sputteringInvestigation of deposition parameters on structural properties and hardness of TiAlN films deposited by reactive pulsed DC magnetron sputtering

Growth kinetics and crystallization behavior of TiO2 films prepared by plasma enhanced atomic layer deposition

Plasma-enhanced atomic layer deposition of titanium nitride for superconducting devices