Abstract:High-density nitrogen plasma was produced using a high-power pulsed power modulator to sputter titanium targets for the preparation of titanium nitride film. The high-power pulsed sputtering discharge unit consisted of two targets facing each other with the same electrical potential. The titanium target plates were used as target materials with dimensions of 60 mm length, 20 mm height, and 5 mm thickness. The gap length was set to be 10 mm. The magnetic field was created with a permanent magnet array behind the targets. The magnetic field strength at the gap between the target plates was 70 mT. The electrons were trapped by the magnetic and electric fields to enhance the ionization in the gap. The nitrogen and argon gases were injected into the chamber with 4 Pa gas pressure. The applied voltage to the target plates had an amplitude from −600 V to −1000 V with 600 μs in pulse width. The target current was approximately 10 A with the consumed power of 13 kW. The discharge sustaining voltage was almost constant and independent of the applied voltage, in the same manner as the conventional normal glow discharge. The ion density and electron temperature at the surface of the ionization region were obtained as 1.7 × 1019 m−3 and 3.4 eV, respectively, by the double probe measurements. The vertical distribution of ion density and electron temperature ranged from 1.1 × 1017 m−3 (at 6 cm from the target edge) to 1.7 × 1019 m−3 and from 2.4 eV (at 6 cm from the target edge) to 3.4 eV, respectively. From the emission spectra, the intensities of titanium atoms (Ti I), titanium ions (Ti II), and nitrogen ions (N2+) increased with increasing input power. However, the intensities ratio of Ti II to Ti I was not affected by the intensities from N2+.

The effect of NH3 plasma pulse time on atomic layer-deposited TiN films using tetrakis-(dimethylamino) titanium as a metal precursor

The Effect of Deposition Temperature of TiN Thin Film Deposition Using Thermal Atomic Layer Deposition

Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition

Low Temperature Deposition of TiN Using Tetrakis(dimethylamido)‐Titanium in an Electron Cyclotron Resonance Plasma Process

TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition

Surface Reaction Mechanism of Atomic Layer Deposition of Titanium Nitride Using Tetrakis(dimethylamino)titanium and Ammonia

Structural and Hydrophilic Properties of TiN Films Prepared by Ultrasonic Atomization Assisted Spray Method under Low Temperature

Influence of Deposition Time on Titanium Nitride (TiN) Thin Film Coating Synthesis Using Chemical Vapour Deposition

EFFECT OF SPRAYING DISTANCE ON THE PROPERTIES OF TITANIUM NITRIDE FILMS PREPARED BY ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION

Effects of Heater Surface Precoating and Plasma Treatment on Deposited TiN Film Thickness

Characterization and electrochemical behavior of a multilayer-structured Ti–N layer produced by plasma nitriding of electron beam melting TC4 alloy in Hank's solution

Investigation of structure and properties of N-doped TiO2 thin films grown by APCVD

Production of High-Power Nitrogen Sputtering Plasma for TiN Film Preparation

Properties of TiN films deposited by atomic layer deposition for through silicon via applications

Plasma Spray Deposition Enhancement of Titanium Nitride Layer Using Nitrogen-Contained Plasma Irradiation of Titanium Substrate as a Pre-spraying Method

Properties and morphology of TiN films deposited by atomic layer deposition

Study of optical and electrical properties of TiN thin films prepared by cathodic ion sputtering

Plasma-enhanced atomic layer deposition of titanium nitride for superconducting devices

Effects of Nitrogen Ion Implantation and Implantation Energy on Surface Properties and Adhesion Strength of TiN Films Deposited on Aluminum by Magnetron Sputtering

Influence of Flow Rates and Flow Times of Plasma-Enhanced Atomic Layer Deposition Purge Gas on TiN Thin Film Properties

Enhancement of Wear and Corrosion Resistance of Ti6Al4V Alloy through Hollow Cathode Discharge-Assisted Plasma Nitriding