TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition

Yi Jia,Rou Gang Tang,Wei Er Lu,You Tong Fang,Yang Xia
DOI: https://doi.org/10.4028/www.scientific.net/msf.817.466
2015-01-01
Materials Science Forum
Abstract:TiN/AlN nanomultilayers were fabricated by plasma enhanced atomic layer deposition (PEALD). The multi-layers were characterized by HRSEM, XRD, EDS and nanoIndenter. The results showed that TiN/AlN nanomultilayers had a good periodic modulation structure, but with quite a lot of O and C contamination which were brought from PEALD process. The O and C contamination impede the crystallization of TiN, leading to a poor hardness of these nanomultilayers. No super-hardness phenomenon was identified based on Koehler theory. Much more attention needs to be paid on decreasing the O and C contamination in PEALD process.
What problem does this paper attempt to address?