Abstract:The Ge surfaces were cleaned and passivated by two kinds of chemical pretreatments: conventional combination of HF + (NH4)(2)S, and new one of HBr + (NH4)(2)S. The chemical states and stability at passivated Ge surfaces were carefully characterized. The influence of chemical surface treatments on the interface and electrical properties of Al2O3 gate dielectric films on Ge grown by atomic layer deposition (ALD) has been investigated deeply. It is found that the combination of HBr and (NH4)(2)S can remove more Ge-O bonds on the Ge surface compared to that of conventional HF and (NH4)(2)S with excellent stability. X-ray photoelectron spectroscopy (XPS) reveals that HBr and (NH4)(2)S treated Ge surface has a mixture states of GeOx (9.25%) and GeS (7.40%) while HF and (NH4)(2)S treated Ge surface has a mixture states of GeOx (16.45%) and GeS (3.37%). And the Ge-S peak from the surface of Ge substrates decreases a little after the HBr and (NH4)(2)S treated Ge surface was exposed in the ambient for 300 min, which suggests the Ge surface is stable to oxidants. The Al2O3 films on HBr and (NH4)(2)S treated Ge substrates exhibits better electrical properties such as large capacitance, decreased leakage current density by similar to two orders of magnitude, and less C-V hysteresis. This indicates that a reduction in charge traps possibly at the interface and more interface traps are terminated by sulfur. The surface treatment of HBr and (NH4)(2)S seems to be very promising in improving the quality of high-k gate stack on Ge substrates. (C) 2010 Elsevier B.V. All rights reserved.

Mechanism of Interfacial Layer Suppression after Performing Surface Al(Ch3)(3) Pretreatment During Atomic Layer Deposition of Al2o3

Spectroscopic and Electrical Properties of Atomic Layer Deposition Al2O3 Gate Dielectric on Surface Pretreated Si Substrate

Effect of Dimethylaluminumhydride-Derived Aluminum Oxynitride Passivation Layer on the Interface Chemistry and Band Alignment of HfTiO-InGaAs Gate Stacks

Interface Optimization and Band Alignments of HfTiO/InGaAs Gate Stacks by Metalorganic Chemical Vapor Deposition of AlON Passivation Layer

Effect of Trimethyl Aluminium Surface Pretreatment on Atomic Layer Deposition Al2o3 Ultra-Thin Film on Si Substrate

Suppression of Ald-Induced Degradation of Ge Mos Interface Properties by Low Power Plasma Nitridation of Geo2

Effects of NH3 Plasma Pretreatment on Initial Reactions of Atomic Layer Deposition TaN Barrier Layer on SiOC Dielectric

Effect of Chemical Surface Treatments on Interfacial and Electrical Characteristics of Atomic-Layer-deposited Al2O3 Films on Ge Substrates

Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.

The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces

Atomic Layer Deposition of High Quality HfO2 Using In-Situ Formed Hydrophilic Oxide As an Interfacial Layer

In Situ X-Ray Photoelectron Spectroscopy Analysis of the Atomic Layer Deposition of Al2O3 on SiO X /si: Interface Dipole and Persistent Surface Groups

Effect of the Chemical Oxide Layer Thickness on the Interfacial Quality of Ald-Grown Hfo2 on Silicon

Interfacial Catalysis in and Initial Reaction Mechanism of Al2o3 Films Fabricated by Atomic Layer Deposition Using Non-Hydrolytic Sol-Gel Chemistry

Study of Interfacial Oxide Layer of LaAlO 3 Gate Dielectrics on Si for Metal–insulator–semiconductor Devices

High-k materials processing: Atomic layer deposition of Al 2O3

Influence of Surface Treatment Prior to ALD High-/Spl Kappa/ Dielectrics on the Performance of SiGe Surface-Channel Pmosfets

The Combination Self-Cleaning Effect of Trimethylaluminium and Tetrakis (Dimethyl-Amino) Hafnium Pretreatments on GaAs

Interface Optimization and Performance Enhancement of Er2O3-Based MOS Devices by ALD-Derived Al2O3 Passivation Layers and Annealing Treatment

In situ x-ray photoelectron spectroscopy analysis of the atomic layer deposition of Al 2 O 3 on SiO x /Si: Interface dipole and persistent surface groups.

Surface and Interfacial Study of Atomic Layer Deposited Al2O3 on MoTe2 and WTe2