Abstract:Suppression of electronic defects induced by GeO x at the high- k gate oxide/SiGe interface is critical for implementation of high-mobility SiGe channels in complementary metal-oxide-semiconductor (CMOS) technology. Theoretical and experimental studies have shown that a low defect density interface can be formed with an SiO x-rich interlayer on SiGe. Experimental studies in the literature indicate a better interface formation with Al2O3 in contrast to HfO2 on SiGe; however, the mechanism behind this is not well understood. In this study, the mechanism of forming a low defect density interface between Al2O3/SiGe is investigated using atomic layer deposited (ALD) Al2O3 insertion into or on top of ALD HfO2 gate oxides. To elucidate the mechanism, correlations are made between the defect density determined by impedance measurements and the chemical and physical structures of the interface determined by high-resolution scanning transmission electron microscopy and electron energy loss spectroscopy. The compositional analysis reveals an SiO x rich interlayer for both Al2O3/SiGe and HfO2/SiGe interfaces with the insertion of Al2O3 into or on top of the HfO2 oxide. The data is consistent with the Al2O3 insertion inducing decomposition of the GeO x from the interface to form an electrically passive, SiO x rich interface on SiGe. This mechanism shows that nanolaminate gate oxide chemistry cannot be interpreted as resulting from a simple layer-by-layer ideal ALD process, because the precursor or its reaction products can diffuse through the oxide during growth and react at the semiconductor interface. This result shows that in scaled CMOS, remote oxide ALD (oxide ALD on top of the gate oxide) can be used to suppress electronic defects at gate oxide semiconductor interfaces by oxygen scavenging.

Growth and interfacial properties of atomic layer deposited Al 0.7 Ti 0.3 O y high- k dielectric on Ge substrate

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

Preparation of High-Quality Gate Dielectrics for Ge MOSFET's in Wet Ambients

Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness

Microstructure, Optical and Electrical Properties of Sputtered HfTiO High-K Gate Dielectric Thin Films

Band alignment and interfacial properties of atomic layer deposited (TiO 2 ) x (Al 2 O 3 ) 1− x gate dielectrics on Ge

Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.

Implementing TiO2 As Gate Dielectric for Ge-channel Complementary Metal-Oxide-semiconductor Devices by Using HfO2/GeO2 Interlayer

Structural and Electrical Characteristics of Al-doped TiO2 High-K Gate Dielectric Grown by Atomic Layer Deposition

TiO2/HfO2 Bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeO xNy passivation layer

Room Temperature Si Δ-Growth on Ge Incorporating High-K Dielectric for Metal Oxide Semiconductor Applications

Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures.

Germanium Surface Passivation and Atomic Layer Deposition of High-K Dielectrics-A Tutorial Review on Ge-Based Mos Capacitors

High Performance Atomic-Layer-Deposited \(LaLuO_3/Ge\)-on-Insulator p-Channel Metal-Oxide-Semiconductor Field-Effect Transistor with Thermally Grown \(GeO_2\) as Interfacial Passivation Layer

Interface State Density Modification and Dielectric Reliability Enhancement of ErTi x O y /Al 2 O 3 /InP Laminated Stacks

Atomic Layer Deposition of HfO2 Gate Dielectric with Surface Treatments and Post-metallization Annealing for Germanium MOSFETs

Engineering High- K/sige Interface with ALD Oxide for Selective GeO X Reduction.

Characterization of Hfo2/Al2o3 Gate Dielectric Nanometer-Stacks Grown by Atomic Layer Deposition on Ge Substrates

Effect of Chemical Surface Treatments on Interfacial and Electrical Characteristics of Atomic-Layer-deposited Al2O3 Films on Ge Substrates

High-k materials processing: Atomic layer deposition of Al 2O3

Thermal Annealing Effects on the Structure and Electrical Properties of Al2O3 Gate Dielectrics on Fully Depleted SiGe on Insulator