Abstract:Ge gate stacks by exposing oxygen plasma to ALD Al2O3/Ge were proposed.GeOx formed between Al2O3 and Ge significantly reduces interface state density.High electron mobility of 690cm2/Vs in Ge nMOSFETs with EOT of 0.7-0.8nm.High hole mobility of 546cm2/Vs in Ge p-MOSFETs with EOT of 0.7-0.8nm. CMOS utilizing high mobility Ge channels on Si substrates is expected to be one of promising devices for high performance and low power advanced LSIs. Here, one of the most critical issues in Ge MOSFETs is the realization of gates stacks with superior MOS interfaces. We have proposed novel Ge gate stack technology using ultrathin Ge oxide interfacial layers (ILs). The Ge ILs are formed by exposing ECR oxygen plasma to thin Al2O3 on Ge substrates, which is called plasma post oxidation. Here, Al2O3 serves as a sufficient oxygen barrier that suppresses the growth of unnecessarily-thick GeOx IL, thanks to its intrinsic oxygen permeability. The relationship between the GeOx thickness and interface state density (Dit) is evaluated. Also, in order to further reduce EOT, we have introduced a revised version of gate stack formation using HfO2/Al2O3 stacks. The role of ultrathin Al2O3 films on the properties of the gate stacks is studied. As a result, HfO2/Al2O3/GeOx/Ge gate stacks having EOT of 0.72nm as the thinnest value have been realized with the excellent interface quality. High electron mobility of 754 and 690cm2/Vs and hole mobility of 596 and 546cm2/Vs have been obtained in EOT of 0.82 and 0.76nm, respectively.

Band alignment and interfacial properties of atomic layer deposited (TiO 2 ) x (Al 2 O 3 ) 1− x gate dielectrics on Ge

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

Growth and interfacial properties of atomic layer deposited Al 0.7 Ti 0.3 O y high- k dielectric on Ge substrate

Nitrogen-Concentration Modulated Interface Quality, Band Alignment and Electrical Properties of Hftion/Ge Gate Stack Pretreated by Trimethylaluminum Precursor

Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness

Interface Optimization and Band Alignments of HfTiO/InGaAs Gate Stacks by Metalorganic Chemical Vapor Deposition of AlON Passivation Layer

Effect of Dimethylaluminumhydride-Derived Aluminum Oxynitride Passivation Layer on the Interface Chemistry and Band Alignment of HfTiO-InGaAs Gate Stacks

Improved Properties of Ge Mos Capacitors with Hftion or Hftio Gate Dielectric by Using Wet-No Ge-Surface Pretreatment

Microstructure, Optical and Electrical Properties of Sputtered HfTiO High-K Gate Dielectric Thin Films

Implementing TiO2 As Gate Dielectric for Ge-channel Complementary Metal-Oxide-semiconductor Devices by Using HfO2/GeO2 Interlayer

TiO2/HfO2 Bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeO xNy passivation layer

Electrical Properties and Interfacial Studies of Hf x Ti1- xO₂ High Permittivity Gate Insulators Deposited on Germanium Substrates

Electrical Properties and Interfacial Studies of HfxTi1–xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates

Interfacial Cation-Defect Charge Dipoles in Stacked TiO2/Al2O3 Gate Dielectrics

Characterization of Hfo2/Al2o3 Gate Dielectric Nanometer-Stacks Grown by Atomic Layer Deposition on Ge Substrates

Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.

Thermal Annealing Effects on the Structure and Electrical Properties of Al2O3 Gate Dielectrics on Fully Depleted SiGe on Insulator

Interface State Density Modification and Dielectric Reliability Enhancement of ErTi x O y /Al 2 O 3 /InP Laminated Stacks

Hfo2/Al2o3/Ge Gate Stacks with Small Capacitance Equivalent Thickness and Low Interface State Density

Atomic Layer Deposition of HfO2 Gate Dielectric with Surface Treatments and Post-metallization Annealing for Germanium MOSFETs

Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties