Abstract:In this paper, the effect of atomic layer deposition-derived laminated interlayer on the interface chemistry and transport characteristics of sputtering-deposited Sm2O3/InP gate stacks have been investigated systematically. Based on X-ray photoelectron spectroscopy (XPS) measurements, it can be noted that ALD-derived Al2O3 interface passivation layer significantly prevents the appearance of substrate diffusion oxides and substantially optimizes gate dielectric performance. The leakage current experimental results confirm that the Sm2O3/Al2O3/InP stacked gate dielectric structure exhibits a lower leakage current density than the other samples, reaching a value of 2.87 × 10−6 A/cm2. In addition, conductivity analysis shows that high-quality metal oxide semiconductor capacitors based on Sm2O3/Al2O3/InP gate stacks have the lowest interfacial density of states (Dit) value of 1.05 × 1013 cm−2 eV−1. The conduction mechanisms of the InP-based MOS capacitors at low temperatures are not yet known, and to further explore the electron transport in InP-based MOS capacitors with different stacked gate dielectric structures, we placed samples for leakage current measurements at low varying temperatures (77–227 K). Based on the measurement results, Sm2O3/Al2O3/InP stacked gate dielectric is a promising candidate for InP-based metal oxide semiconductor field-effect-transistor devices (MOSFET) in the future.

Interfacial Cation-Defect Charge Dipoles in Stacked TiO2/Al2O3 Gate Dielectrics

Interface Optimization and Band Alignments of HfTiO/InGaAs Gate Stacks by Metalorganic Chemical Vapor Deposition of AlON Passivation Layer

Current Conduction And Stability Of Ceo2/La2o3 Stacked Gate Dielectric

Impact of Ultrathin Al2O3 Interlayer on Thermal Stability and Leakage Current Properties of TiO2/Al2O3 Stacking Dielectrics

On the Current Conduction Mechanisms of Ceo2/La2o3 Stacked Gate Dielectric

Interface State Density Modification and Dielectric Reliability Enhancement of ErTi x O y /Al 2 O 3 /InP Laminated Stacks

Band alignment and interfacial properties of atomic layer deposited (TiO 2 ) x (Al 2 O 3 ) 1− x gate dielectrics on Ge

Preparation and Properties of TiO2/Al2O3 Stacked High k Gate Dielectric Films

TiO2/HfO2 Bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeO xNy passivation layer

Solution-processed Stacked TiO2 and Al2O3 Dielectric Layers for High Mobility Thin Film Transistor

Interface Optimization and Transport Modulation of Sm2O3/InP Metal Oxide Semiconductor Capacitors with Atomic Layer Deposition-Derived Laminated Interlayer

Interface Engineering Through Atomic Dopants in Hfo2-Based Gate Stacks

Growth and interfacial properties of atomic layer deposited Al 0.7 Ti 0.3 O y high- k dielectric on Ge substrate

Hfo2/Al2o3/Ge Gate Stacks with Small Capacitance Equivalent Thickness and Low Interface State Density

Leakage Current Behavior in HfO2/SiO2/Al2O3 Stacked Dielectric on 4H-SiC Substrate

Implementing TiO2 As Gate Dielectric for Ge-channel Complementary Metal-Oxide-semiconductor Devices by Using HfO2/GeO2 Interlayer

Impact of Lanthanum-Induced Dipoles on the Tunneling and Dielectric Properties of Gate-Stack

Detecting Electric Dipoles Interaction at the Interface of Ferroelectric and Electrolyte Using Graphene Field Effect Transistors

Interface Defect Hydrogen Depassivation and Capacitance-Voltage Hysteresis of Al2O3/InGaAs Gate Stacks.

Structural and Electrical Characteristics of Al-doped TiO2 High-K Gate Dielectric Grown by Atomic Layer Deposition

Interface Studies Of Gaas Metal-Oxide-Semiconductor Structures Using Atomic-Layer-Deposited Hfo2/Al2o3 Nanolaminate Gate Dielectric