Abstract:Polarity discontinuities at the interfaces between different crystalline materials (heterointerfaces) can lead to nontrivial local atomic and electronic structure, owing to the presence of dangling bonds and incomplete atomic coordinations1,2,3. These discontinuities often arise in naturally layered oxide structures, such as the superconducting copper oxides and ferroelectric titanates, as well as in artificial thin film oxide heterostructures such as manganite tunnel junctions4,5,6. If polarity discontinuities can be atomically controlled, unusual charge states that are inaccessible in bulk materials could be realized. Here we have examined a model interface between two insulating perovskite oxides—LaAlO3 and SrTiO3—in which we control the termination layer at the interface on an atomic scale. In the simple ionic limit, this interface presents an extra half electron or hole per two-dimensional unit cell, depending on the structure of the interface. The hole-doped interface is found to be insulating, whereas the electron-doped interface is conducting, with extremely high carrier mobility exceeding 10,000 cm2 V-1 s-1. At low temperature, dramatic magnetoresistance oscillations periodic with the inverse magnetic field are observed, indicating quantum transport. These results present a broad opportunity to tailor low-dimensional charge states by atomically engineered oxide heteroepitaxy.

-type Fermi level pinning at a model interface

Interface Optimization and Band Alignments of HfTiO/InGaAs Gate Stacks by Metalorganic Chemical Vapor Deposition of AlON Passivation Layer

Oxynitridization Dependent Interface Control and Band Alignment of AlON/SiON/Si Gate Stacks Grown by Metalorganic Chemical Vapor Deposition

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Effect of Dimethylaluminumhydride-Derived Aluminum Oxynitride Passivation Layer on the Interface Chemistry and Band Alignment of HfTiO-InGaAs Gate Stacks

Band alignments and defect levels in Si–HfO2 gate stacks: Oxygen vacancy and Fermi-level pinning

Fermi Level Pinning in Metal/al2o3/ingaas Gate Stack after Post Metallization Annealing

Using atom probe tomography to understand Schottky barrier height pinning at the ZnO:Al / SiO2 / Si interface

Structural and electrical characterization of Al2O3/HfO2/Al2O3 on strained SiGe

Fermi Pinning-Induced Thermal Instability of Metal-Gate Work Functions

Interfacial Cation-Defect Charge Dipoles in Stacked TiO2/Al2O3 Gate Dielectrics

Interface Engineering Through Atomic Dopants in Hfo2-Based Gate Stacks

Exploring the influence of Al content on the optical and interface properties of HfAlOx mixed gate dielectric thin films and their applications in MOS devices

Understanding the Clean Interface Between Covalent Si and Ionic Al2O3

Interface Studies Of Gaas Metal-Oxide-Semiconductor Structures Using Atomic-Layer-Deposited Hfo2/Al2o3 Nanolaminate Gate Dielectric

Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition.

Fermi-Level Pinning Induced Thermal Instability in the Effective Work Function of Tan in Tan/Sio2 Gate Stack

A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

Understanding the Clean Interface Between Covalent Si and IonicAl2O3

Interface and Electrical Properties of Buried InGaAs Channel MOSFET with an InP Barrier Layer and Al2O3/HfO2/Al2O3 Gate Dielectrics

Long-Range Nanoelectromechanical Coupling at the LaAlO$_3$/SrTiO$_3$ Interface