Abstract:High-quality gate dielectric layers and high-grade interfaces between high- films and substrates are essential to achieve favorable performance and electrical stability of metal–oxide–semiconductor field effect transistors (MOSFETs). The carrier trapping behavior of the oxide layer and interface defects under different external stresses has raised concerns about the instability of the performance of II I–V compound semiconductor devices. Herein, we explore the atomic-layer-deposition (ALD) growth method of erbium oxide (Er2O3) and the fabrication of InP-based MOS capacitors. Moreover, the trapping effects of oxide layer traps and interface traps were separated using the mid-band voltage method, and the stability evolution of the ALD-derived Er2O3/InP MOS capacitors under irradiation, voltage stress, and temperature was investigated comparatively. In this work, favorable interface chemical states and optimized interface roughness in the Er2O3/InP structure achieved a low-leakage current density of /cm2 and an interface density of states of eV cm−2. The stability tests results show that irradiation mainly applied at the interface leads to the generation of defects, the capture of electrons increases, and the device performance varies; under the voltage stress primarily the electrons capture by defects inside the oxide layer shifts the flat-band voltage; high-temperature damages both the gate oxide layer and interface, and the defects primarily capture positive charges, which affects the stability considerably.

Interface State Density Modification and Dielectric Reliability Enhancement of ErTi x O y /Al 2 O 3 /InP Laminated Stacks

Interface Optimization of Passivated Er 2 O 3 /Al 2 O 3 /InP MOS Capacitors and Modulation of Leakage Current Conduction Mechanism

Interface Chemistry and Defect State Optimization of the ErSmO/InP Heterojunction Modified by ALD-Driven Al 2 O 3 Interlayers

Interface Optimization and Performance Enhancement of Er2O3-Based MOS Devices by ALD-Derived Al2O3 Passivation Layers and Annealing Treatment

Electrical Performance Determination and Stress Reliability Estimation of ALD- Derived Er2O3/InP Heterointerface

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

Analysis of the Electrical Properties and Current Transportation Mechanism of a Metal Oxide Semiconductor (MOS) Capacitor Based on HfGdO Gate Dielectrics

Oxynitridization Dependent Interface Control and Band Alignment of AlON/SiON/Si Gate Stacks Grown by Metalorganic Chemical Vapor Deposition

Al2o3/Geox/Ge Gate Stacks with Low Interface Trap Density Fabricated by Electron Cyclotron Resonance Plasma Postoxidation

Interface Optimization and Transport Modulation of Sm2O3/InP Metal Oxide Semiconductor Capacitors with Atomic Layer Deposition-Derived Laminated Interlayer

MOS interface control of high mobility channel materials for realizing ultrathin EOT gate stacks

The interfaces of lanthanum oxide-based subnanometer EOT gate dielectrics.

Reduction in Interface Trap Density of Al2O3/SiGe Gate Stack by Electron Cyclotron Resonance Plasma Post-nitridation

Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation

Growth and interfacial properties of atomic layer deposited Al 0.7 Ti 0.3 O y high- k dielectric on Ge substrate

Interfacial Cation-Defect Charge Dipoles in Stacked TiO2/Al2O3 Gate Dielectrics

Current Conduction And Stability Of Ceo2/La2o3 Stacked Gate Dielectric

Effect of Er Ion Implantation on the Physical and Electrical Properties of TiN/HfO 2 Gate Stacks on Si Substrate

Investigation of a 4H—SiC metal—insulation—semiconductor structure with an Al2O3/SiO2 stacked dielectric

Band alignment and interfacial properties of atomic layer deposited (TiO 2 ) x (Al 2 O 3 ) 1− x gate dielectrics on Ge

TiO2/HfO2 Bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeO xNy passivation layer