Abstract:The electric gating on the transport properties of two-dimensional electron gas (2DEG) at the interface of LaAlO3/SrTiO3 (LAO/STO) heterostructure has attracted great research interest due to its potential application in field-effect devices. Most of previous works of gate effect were focused on the LAO/STO heterostructure containing only one conductive interface. Here, we systematically investigated the gate effect on high-quality LAO/STO superlattices (SLs) fabricated on the TiO2-terminated (001) STO substrates. In addition to the good metallicity of all SLs, we found that there are two types of charge carriers, the majority carriers and the minority carriers, coexisting in the SLs. The sheet resistance of the SLs with a fixed thickness of the LAO layer increases monotonically as the thickness of the STO layer increases. This is derived from the dependence of the minority carrier density on the thickness of STO. Unlike the LAO/STO heterostructure in which minority and majority carriers are simultaneously modulated by the gate effect, the minority carriers in the SLs can be tuned more significantly by the electric gating while the density of majority carriers is almost invariable. Thus, we consider that the minority carriers may mainly exist in the first interface near the STO substrate that is more sensitive to the back-gate voltage, and the majority carriers exist in the post-deposited STO layers. The SL structure provides the space separation for the multichannel conduction in the 2DEG, which opens an avenue for the design of field-effect devices based on LAO/STO heterostructure.

Impact of Lanthanum-Induced Dipoles on the Tunneling and Dielectric Properties of Gate-Stack

The interfaces of lanthanum oxide-based subnanometer EOT gate dielectrics.

Current Conduction And Stability Of Ceo2/La2o3 Stacked Gate Dielectric

Interfacial modulation and electrical properties improvement of solution-processed ZrO2 gate dielectrics upon Gd incorporation

Thermal annealing, interface reaction, and lanthanum-based sub-nanometer EOT gate dielectrics

Interface Engineering Through Atomic Dopants in Hfo2-Based Gate Stacks

Electrostatic Modulation of the Lateral Carrier Density Profile in Field Effect Devices with Nonlinear Dielectrics

On the Current Conduction Mechanisms of Ceo2/La2o3 Stacked Gate Dielectric

Interfacial Cation-Defect Charge Dipoles in Stacked TiO2/Al2O3 Gate Dielectrics

Reconstruction of Electrostatic Field at the Interface Leads to Formation of Two-Dimensional Electron Gas at Multivalent (110) Laalo3/Srtio3 Interfaces

Electric gating of the multichannel conduction in LaAlO<sub>3</sub>/SrTiO<sub>3</sub> superlattices*

Electric Gating of the Multichannel Conduction in LaAlO3/SrTiO3 Superlattices*

Oxygen Scavenging Effect of LaLuO3/TiN Gate Stack in High-Mobility Si/SiGe/SOI Quantum-Well Transistors*

Band alignment and charge transfer mechanisms in the prediction of advanced gate dielectrics for carbon nanotube field-effect transistors

Interfacial charge and strain effects on lanthanum doped barium stannate thin film under ferroelectric gating

Interface Chemistry Evolution and Leakage Current Conduction Mechanism Determination in Rare-Earth-Doped Hf-Based Gate Dielectrics

The influence of lanthanum doping position in ultra-thin HfO2 films for high-k gate dielectrics

Effect of La Addition on the Electrical Characteristics and Stability of Solution-Processed LaInO Thin-Film Transistors with High- ${k}$ ZrO 2 Gate Insulator

Field-Effect Transistors With Laalo3 And Laaloxny Gate Dielectrics Deposited By Laser Molecular-Beam Epitaxy

Leakage current mechanism and effect of Y 2 O 3 doped with Zr high-K gate dielectrics

Surface Acceptor-Like Trap Model for Gate Leakage Current Degradation in Lattice-Matched Inaln/Gan Hemts