Giant Enhancement In The Ferroelectric Field Effect Using A Polarization Gradient

zongquan gu,mohammad a islam,jonathan e spanier
DOI: https://doi.org/10.1063/1.4933095
IF: 4
2015-01-01
Applied Physics Letters
Abstract:Coupling of switchable ferroelectric polarization with the carrier transport in an adjacent semiconductor enables a robust, non-volatile manipulation of the conductance in a host of low-dimensional systems, including the two-dimensional electron liquid that forms at the LaAlO3 (LAO)-SrTiO3 (STO) interface. However, strength of the gate-channel coupling is relatively weak, limited in part by the electrostatic potential difference across a ferroelectric gate. Here, through application of phenomenological Landau-Ginzburg-Devonshire theory and self-consistent Poisson-Schrodinger model calculations, we show how compositional grading of PbZr1-xTixO3 ferroelectric gates enables a more than twenty-five-fold increase in the LAO/STO channel conductance on/off ratios. Incorporation of polarization gradients in ferroelectric gates can enable breakthrough performance of ferroelectric non-volatile memories. (C) 2015 AIP Publishing LLC.
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