Ferroelectric control of the conduction at the LaAlO₃/SrTiO₃ heterointerface.

Vu Thanh Tra,Jhih-Wei Chen,Po-Cheng Huang,Bo-Chao Huang,Ye Cao,Chao-Hui Yeh,Heng-Jui Liu,Eugene A Eliseev,Anna N Morozovska,Jiunn-Yuan Lin,Yi-Chun Chen,Ming-Wen Chu,Po-Wen Chiu,Ya-Ping Chiu,Long-Qing Chen,Chung-Lin Wu,Ying-Hao Chu
DOI: https://doi.org/10.1002/adma.201300757
IF: 29.4
2013-01-01
Advanced Materials
Abstract:Modulation of band bending at a complex oxide heterointerface by a ferroelectric layer is demonstrated. The as-grown polarization (Pup ) leads to charge depletion and consequently low conduction. Switching the polarization direction (Pdown ) results in charge accumulation and enhances the conduction at the interface. The metal-insulator transition at a conducting polar/nonpolar oxide heterointerface can be controlled by ferroelectric doping.
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