Reversible magnetism transition at ferroelectric oxide heterointerface

Jialu Chen,Zijun Zhang,Liang Luo,Yunhao Lu,Cheng Song,Di Cheng,Xing Chen,Wei Li,Zhaohui Ren,Jigang Wang,He Tian,Ze Zhang,Gaorong Han
DOI: https://doi.org/10.1016/j.scib.2020.09.024
IF: 18.9
2020-12-01
Science Bulletin
Abstract:<p>Oxide heterointerface is a platform to create unprecedented two-dimensional electron gas, superconductivity and ferromagnetism, arising from a polar discontinuity at the interface. In particular, the ability to tune these intriguing effects paves a way to elucidate their fundamental physics and to develop novel electronic/magnetic devices. In this work, we report for the first time that a ferroelectric polarization screening at SrTiO<sub>3</sub>/PbTiO<sub>3</sub> interface is able to drive an electronic construction of Ti atom, giving rise to room-temperature ferromagnetism. Surprisingly, such ferromagnetism can be switched to antiferromagnetism by applying a magnetic field, which is reversible. A coupling of itinerant electrons with local moments at interfacial Ti 3d orbital was proposed to explain the magnetism. The localization of the itinerant electrons under a magnetic field is responsible for the suppression of magnetism. These findings provide new insights into interfacial magnetism and their control by magnetic field relevant interfacial electrons promising for device applications.</p>
multidisciplinary sciences
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