Abstract:Enormous emergent phenomena are discovered from oxide heterointerfaces, due to the reconstruction of charge, lattice and spin degrees of freedom. This work reports a new approach to manipulate the interfacial electronic state of complex oxides through the oxygen ionic evolution, demonstrating a direct correlation between oxygen ionic migration across the interface and interface polyhedral stacking. Such control changes dramatically the magnetic and electronic states of adjacent oxide layer. Complex oxide heterointerfaces and heterostructures have demonstrated enormous emergent phenomena over the last decades, attributed to the reconstructions of mis‐matched crystalline structure, polarity, and spin ordering across the heterointerfaces. This work employs the heterostructures of La0.7Sr0.3MnO3 and CaFeO2.5 as model system to demonstrate an interface‐specific oxygen migration/reconstruction across the interfaces due to the mismatched chemical potential, which dramatically influences the ferromagnetic and electronic states of La0.7Sr0.3MnO3 layer. Specifically, the alternative stacking of octahedral (Oh) and tetrahedral (Td) layers in CaFeO2.5 are used to form two distinct heterointerfaces, namely the Oh‐Td and the Oh‐Oh interfaces with the adjacent La0.7Sr0.3MnO3 layer. Interestingly, the oxygen ion migrates toward opposite directions across the interface for these two cases, in which the CaFeO2.5 layer acts as an "oxygen pump" and manipulates the oxygen contents of its adjacent La0.7Sr0.3MnO3 layers. Such manipulation leads to a dramatically changed ferromagnetic transition temperature for the heterostructure with the Oh‐Td and Oh‐Oh interface. This work establishes a feasible and efficient strategy to control the oxygen ionic distribution through atomic‐scale interface design and opens up new opportunities to exploit emergent states at the complex oxide heterostructures through selective oxygen ion evolution.

2 P-Insulator Heterointerfaces: Creation of Half-Metallicity and Anionogenic Ferromagnetism Via Double Exchange

Pure Electronic Metal-Insulator Transition at the Interface of Complex Oxides

Tuning The Competition Between Ferromagnetism And Antiferromagnetism In A Half-Doped Manganite Through Magnetoelectric Coupling

Atomic-Scale Control of Magnetism at the Titanite-Manganite Interfaces.

Reversible magnetism transition at ferroelectric oxide heterointerface

Interface robust magnetoelectric coupling effect in ferromagnetic/ferroelectric BiFeO3/KNbO3 heterostructure: First-principles calculations

Novel 2DEG System at the HfO2/STO Interface

Novel 2DEG System at the HfO2/STO Interface.

Reconstruction of Electrostatic Field at the Interface Leads to Formation of Two-Dimensional Electron Gas at Multivalent (110) Laalo3/Srtio3 Interfaces

Half-Metallic P-Type Laalo3/Eutio3 Heterointerface from Density-Functional Theory

Multiferroic Interfaces Composed of D0 Perovskites Oxides

Oxygen Ion Pumping across Atomically Designed Oxide Heterointerfaces

Electric Field Tunable Half-Metallic Characteristic at Fe3O4/BaTiO3 Interfaces.

Two-dimensional electron gas at LaInO$_3$/BaSnO$_3$ interfaces controlled by a ferroelectric layer

Interfacial Multiferroics of TiO2/PbTiO3 Heterostructure Driven by Ferroelectric Polarization Discontinuity

How a Ferroelectric Layer Can Tune a Two-Dimensional Electron Gas at the Interface of LaInO3 and BaSnO3: A First-Principles Study

A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

Polarization-Mediated Thermal Stability of Metal/Oxide Heterointerface.

How ferroelectric BaTiO$_3$ can tune a two-dimensional electron gas at the interface of LaInO3 and BaSnO$_3$: a first-principles study

Spin-polarized two-dimensional electron/hole gas at the interface of non-magnetic semiconducting half-Heusler compounds: Modified Slater-Pauling rule for half-metallicity at the interface

The fate of half-metallicity near interfaces: the case of NiMnSb/MgO and NiMnSi/MgO