Abstract:Utilization of the switchable spontaneous polarization of ferroelectric materials offers a promising avenue for the future of nanoelectronic memories and logic devices provided that nanoscale metal-ferroelectric-metal heterostructures can be engineered to maintain a bi-stable polarization switchable by an applied electric field. The most challenging aspect of this approach is to overcome the deleterious interface effects which tend to render ferroelectric polarization either unstable or unswitchable and which become ever more important as ferroelectric materials are produced thinner and thinner. Here we use first-principles density functional calculations and phenomenological modeling to demonstrate that a BaO/RuO2 interface termination sequence in SrRuO3/BaTiO3/SrRuO3 epitaxial heterostructures grown on SrTiO3 can lead to a nonswitchable polarization state for thin BaTiO3 films due to a fixed interface dipole. The unfavorable interface dipole at the BaO/RuO2 interface leads to a strong preference for one polarization state and, in thin film structures, leads to instability of the second state below a certain critical thickness, thereby making the polarization unswitchable. We analyze the contribution of this interface dipole to the energetic stability of these heterostructures. Furthermore, we propose and demonstrate that this unfavorable interface dipole effect can be alleviated by deposition of a thin layer of SrTiO3 at the BaO/RuO2 terminated interface. Our first-principles and phenomenological modeling predict that the associated change of the interface termination sequence to SrO/TiO2 on both sides of the heterostructure leads to a restoration of bi-stability with a smaller critical thickness, along with an enhancement of the barrier for polarization reversal. These results demonstrate that interface engineering is a viable approach to enhance ferroelectric properties at the nanoscale.

Polarization-controlled Ohmic to Schottky Transition at a Metal/ferroelectric Interface

Polarization Controlled Ohmic to Schottky Transition at a Metal/Doped Ferroelectric Interface

Tuning Interfacial Magnetic Ordering Via Polarization Control in Ferroelectric SrTiO3/PbTiO3 Heterostructure.

The Ferroelectric Field Effect on the Two-Dimensional Electron Gas at LaAlO3/SrTiO3 (001) Interface: Insights from First Principle Simulations

Ferroelectricity-like Polarization and Metallicity at GdAlO3/SrTiO3 Heterointerfaces

Direct Observation of Ferroelectric Polarization-Modulated Band Bending at Oxide Interfaces

Interface Dipole Effect on Thin Film Ferroelectric Stability: First-Principles and Phenomenological Modeling

Atomic-Scale Control of Magnetism at the Titanite-Manganite Interfaces.

Schottky Barrier Control of Self-Polarization for a Colossal Ferroelectric Resistive Switching

Optical Control of Polarization in Ferroelectric Heterostructures

Electric control of spin injection into a ferroelectric semiconductor

Imaging and tuning polarity at SrTiO 3 domain walls

Polarity control of carrier injection at ferroelectric/metal interfaces for electrically switchable diode and photovoltaic effects

Ferroelectric Polarization-Controlled Resistive Switching in BaTiO3/SmNiO3 Epitaxial Heterostructures

Atomic-Scale Insight into the Reversibility of Polar Order in Ultrathin Epitaxial Nb:SrTiO 3/batio 3 Heterostructure and Its Implication to Resistive Switching

Ferroelectric Exchange Bias Affects Interfacial Electronic States

Optical Modulation of MoTe2/Ferroelectric Heterostructure via Interface Doping.

Electric Polarization Switching on an Atomically Thin Metallic Oxide

Polarization Control of Electron Tunneling into Ferroelectric Surfaces.

Interface Control Of Bulk Ferroelectric Polarization

First-Principles Prediction Of Switchable Metallic Ferroelectricity In Multiferroic Tunnel Junctions