Abstract:The ability to directly monitor the states of electrons in modern field-effect devices—for example, imaging local changes in the electrical potential, Fermi level and band structure as a gate voltage is applied—could transform our understanding of the physics and function of a device. Here we show that micrometre-scale, angle-resolved photoemission spectroscopy<a href="#ref-CR1">1</a>,<a href="#ref-CR2">2</a>,<a href="/articles/s41586-019-1402-1#ref-CR3">3</a> (microARPES) applied to two-dimensional van der Waals heterostructures<a href="/articles/s41586-019-1402-1#ref-CR4">4</a> affords this ability. In two-terminal graphene devices, we observe a shift of the Fermi level across the Dirac point, with no detectable change in the dispersion, as a gate voltage is applied. In two-dimensional semiconductor devices, we see the conduction-band edge appear as electrons accumulate, thereby firmly establishing the energy and momentum of the edge. In the case of monolayer tungsten diselenide, we observe that the bandgap is renormalized downwards by several hundreds of millielectronvolts—approaching the exciton energy—as the electrostatic doping increases. Both optical spectroscopy and microARPES can be carried out on a single device, allowing definitive studies of the relationship between gate-controlled electronic and optical properties. The technique provides a powerful way to study not only fundamental semiconductor physics, but also intriguing phenomena such as topological transitions<a href="/articles/s41586-019-1402-1#ref-CR5">5</a> and many-body spectral reconstructions under electrical control.

Electrostatic Modulation of the Lateral Carrier Density Profile in Field Effect Devices with Nonlinear Dielectrics

Visible-light-enhanced gating effect at the LaAlO₃/SrTiO₃ interface.

Visible-light-enhanced gating effect at the LaAlO 3 /SrTiO 3 interface

Dual-Gate Modulation of Carrier Density and Disorder in an Oxide Two-Dimensional Electron System

Giant Tunability of the Two-Dimensional Electron Gas at the Interface of Γ-Al2o3/srtio3

Modulated In-Plane Carrier Distribution of Oxide Two-Dimensional Electron Gas Systems by Light Assisted Electrostatic Gating

Tunable magnetic interactions in LaAlO3/SrTiO3 heterostructures by ionic liquid gating

Long-Range Nanoelectromechanical Coupling at the LaAlO$_3$/SrTiO$_3$ Interface

Imaging and tuning polarity at SrTiO 3 domain walls

Impact of Large Gate Voltages and Ultrathin Polymer Electrolytes on Carrier Density in Electric-Double-Layer-Gated Two-Dimensional Crystal Transistors

Electric gating of the multichannel conduction in LaAlO<sub>3</sub>/SrTiO<sub>3</sub> superlattices*

Electrolyte-gate-driven carrier density modulation and metal–insulator transition in semiconducting epitaxial CdO films

Highly Mobile Two-Dimensional Electron Gases with a Strong Gating Effect at the Amorphous LaAlO3/KTaO3 Interface.

Carrier Tuning of 2D Electron Gas in Field-Effect Devices Based on Al2O3/ZnO Heterostructures.

Electric Gating of the Multichannel Conduction in LaAlO3/SrTiO3 Superlattices*

Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric

Self-aligned local electrolyte gating of 2D materials with nanoscale resolution

Visualizing electrostatic gating effects in two-dimensional heterostructures

A Gate-tunable Polarized Phase of Two-Dimensional Electrons at the LaAlO3/SrTiO3 Interface

Ferroelectric domain modulated AlGaN/GaN field effect transistor

Full Control of Solid-State Electrolytes for Electrostatic Gating