Abstract:By utilizing the dipole interactions, polar heterostructures are developing toward two-dimensional/three-dimensional (2D/3D) hybrid dimensions for unique phenomena such as polarization-induced electric field, charge separation, band-structure modification, etc. In this study, we have constructed 2D/3D alpha-In2Se3/GaN polar heterostructures by stacking 2D alpha-In2Se3 and 3D wurtzite GaN semiconductors with distinct polarity configurations. Upon GaN contacting with alpha-In2Se3, the structural stability demonstrates a direct dependence on the polarity assembly, as evidenced by the change of binding energy from -1.39/-1.83 eV in Ga-polarity to -2.99/-1.95 eV in N-polarity. In particular, the polarity inversion of GaN not only dictates the direction of charge transfer but also increases the electrostatic potential differences from 2.92/1.84 eV in N-polarity to 3.65/5.10 eV in Ga-polarity. Moreover, the interfacial polarization and electronic band profiles of alpha-In2Se3/GaN have been further adjusted by applying the external electric field. It is found that the interfacial dipole interaction plays a crucial role in the external electric field modulation, with a direct correlation to the charge distribution at alpha-In2Se3/GaN polar heterointerfaces. By sweeping the external electric field from -0.4 to 0.4 V/& Aring;, the alpha-In2Se3(up arrow)/GaN(up arrow) and alpha-In2Se3(down arrow)/GaN(up arrow) polar heterostructures maintain the type-III electronic band profiles, attributed to the electrostatic shielding effect of high-density charge carriers. However, the band alignments of alpha-In2Se3(up arrow)/GaN(down arrow) and alpha-In2Se3(down arrow)/GaN(down arrow) polar heterostructures have been extensively transformed from type-III, to type-II, and then to type-I. Our findings demonstrate the effective capability of polarity inversion and external electric field on manipulating dipole interactions of 2D/3D polar heterostructures, paving the way for the innovative design and optimization of next-generation optoelectronics, information memory, and neural computing applications.

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Investigation on the sources of 2DEG in AlxGa1-xN/GaN HEMT

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Optimization of Two-Dimensional Electron Gases and I–V Characteristics for AlGaN/GaN HEMT Devices

Manipulating Ferroelectric Α-In2se3/gan Dipole Interactions by Polarization Engineering