Abstract:Reconfigurable radio‐frequency (RF) gallium nitride high‐electron mobility transistors (HEMTs) heterointegrated with a two‐dimensional ferroelectric semiconductor are demonstrated. The fabricated HEMTs exhibit the sharpest subthreshold slope with tunable threshold voltage, transconductance, and maximum frequency in the range of several GHz under a fast pulsed gate‐voltage signal. The tunability is exploited to show reconfigurable RF characteristics toward wireless communication and power transmission applications.The wireless communication and power transmission environment varies widely depending on time and place, and thus reconfigurable devices and circuits are in high demand due to the significant increase in complexity of the power stage and chip size required for current non‐reconfigurable device‐based systems. Reconfigurable radio‐frequency (RF) devices, however, are difficult to demonstrate due to the lack of suitable materials with desirable material properties that can also be integrated with conventional high‐power materials. Here, reconfigurable gallium nitride (GaN) high‐electron mobility transistors (HEMTs) that are heterointegrated with 2D van der Waals‐interfaced α‐In2Se3 semiconductor are demonstrated. The switchable ferroelectric polarization of the 2D α‐In2Se3 layer is exploited to control the 2D electron gas charge density in the GaN channel. Further, a native interfacial indium oxide layer between the gate dielectric and α‐In2Se3 functions as a charge trapping layer, boosting the effect of the ferroelectric α‐In2Se3 layer. The fabricated HEMTs exhibit the sharpest subthreshold slope with tunable threshold voltage, transconductance, and maximum frequency in the range of several GHz under the application of a fast pulsed gate‐voltage signal without sacrificing the performance. The results clearly demonstrate the immense potential of ferroelectric‐based mixed‐dimensional heterostructures as a viable pathway toward simple and compact reconfigurable RF systems.

Integration of Ferroelectrics with III-N Transistors for High Performance Millimeter-Wave Applications

Reconfigurable Radio‐Frequency High‐Electron Mobility Transistors via Ferroelectric‐Based Gallium Nitride Heterostructure

Ferroelectric domain modulated AlGaN/GaN field effect transistor

Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT

N-polar GaN Epitaxy and High Electron Mobility Transistors

Hf$_{\text{0.5}}$Zr$_{\text{0.5}}$O$_{\text{2}}$-Based Ferroelectric Gate AlGaN/GaN HEMTs With Steep Subthreshold Swings

Novel T-Shaped Gate With Air Gap for AlGaN/GaN HEMTs on Silicon With High Johnson's Figures of Merit

FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors

Next generation electronics on the ultrawide-bandgap aluminum nitride platform

Polarization induced doping and high-k passivation engineering on T-gate MOS-HEMT for improved RF/microwave performance

Enhanced Performances of AlGaN/GaN HEMTs with Dielectric Engineering of HfZrOx

A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer

High Performance $0.25\mu\mathrm{m}$ GaN Technology with Low Memory Effects

High-Performance HZO/InAlN/GaN MIS-HEMT with fT/fmax of 155/250 GHz

Integration of low-thermal-budget In2O3 NMOS inverter and GaN HEMT for power electronics

Investigation of enhancement mode HfO2 insulated N-polarity GaN/InN/GaN/In0.9Al0.1N heterostructure MISHEMT for high-frequency applications

The DC Performance and RF Characteristics of GaN-Based HEMTs Improvement Using Graded AlGaN Back Barrier and Fe/C Co-Doped Buffer

Demonstration of Wide Bandgap AlGaN/GaN Negative‐Capacitance High‐Electron‐Mobility Transistors (NC‐HEMTs) Using Barium Titanate Ferroelectric Gates

Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V f max ·V BK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates

Normally-off AlN/β-Ga2O3 Field-Effect Transistors Using Polarization-Induced Doping

Mm-Wave Performance of 50nm T-Gate AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistors with Ft of 200 GHz