Abstract:III-nitrides based high electron-mobility transistors (HEMTs) are well-known excellent candidates for high-power, radio-frequency (rf) and high-temperature applications. However, HEMTs have to face the essential issues of high gate leakage current and drain current collapse (gate-lag), which inevitably limits the device performances and reliability. Here, we fabricate an optimized AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT), by using HfZrOx (HZO) as a gate dielectric, that can improve the interfacial and transport properties. Compared to the conventional high permittivity (high-kappa) gate dielectric HfO2 which has attracted wide attention in recent years, the concentrations of interface traps and the inside fixed oxide defects are obviously reduced by using high quality HZO layer. Through the dielectric engineering of HZO, the MOS-HEMT with HZO dielectric shows an enhanced DC output performance with an increase of 54% at the optimal working condition, which is indeed much higher than that of the HfO2 MOS-HEMT (40%). And the HZO MOS-HEMT exhibits a higher I-on/I-off ratio of 10(6), an excellent subthreshold swing (SS) of 85 mV/decade, and a higher voltage swing (GVS). The gate leakage is reduced by nearly 8 orders of magnitude compared to the conventional unpassivated HEMTs (conv. HEMT) at the gate voltage of -5 V. These results are mainly caused by the replacement of the low-height Schottky barrier (SB) and the reduction of interface traps density. In order to further investigate the interfacial and electric properties of HZO MOS-HEMT, the dynamic gate/drain voltage and high-frequency capacitance-voltage (C-V) measurements are both applied. Remarkably, no measurable current collapse and C-V hysteresis are clearly observed, showing the enhanced interfacial and electric performances of the MOS-HEMT with dielectric engineering of HZO.

Polarization induced doping and high-k passivation engineering on T-gate MOS-HEMT for improved RF/microwave performance

Low Leakage Current and High-Cutoff Frequency AlGaN/GaN MOSHEMT Using Submicrometer-Footprint Thermal Oxidized TiO2/NiO As Gate Dielectric

Enhanced Performances of AlGaN/GaN HEMTs with Dielectric Engineering of HfZrOx

RF Performance Augmentation Using DG-InAlN/GaN HEMT

Integration of Ferroelectrics with III-N Transistors for High Performance Millimeter-Wave Applications

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Analysis of Passivation Techniques in InP HEMTs and Implementation of an Analytical Model of F(t) Based on the Small Signal Equivalent Circuit

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Investigation of enhancement mode HfO2 insulated N-polarity GaN/InN/GaN/In0.9Al0.1N heterostructure MISHEMT for high-frequency applications

High-Performance HZO/InAlN/GaN MIS-HEMT with fT/fmax of 155/250 GHz

Small signal and noise analysis of T-gate HEMT with polarization doped buffer for LNAs

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Performance analysis of InAlN/GaN HEMT and optimization for high frequency applications

Novel T-Shaped Gate With Air Gap for AlGaN/GaN HEMTs on Silicon With High Johnson's Figures of Merit

Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study

Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future RF electronic applications

Drain-extended MOS design using High-k dielectric to control off-state BTBT with enhanced switching performance

High Breakdown AlGaN/GaN MOSHEMT with Thermal Oxidized Ni/Ti As Gate Insulator