Abstract:Novel Al 2 O 3 -dielectric InAlN/AlN/GaN Γ-Gate metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with composite Al 2 O 3 /TiO 2 passivation oxides formed by using ultrasonic spray pyrolysis deposition/RF sputtering, respectively, are investigated. The r-gate includes a 1-μm long active gate on the Al 2 O 3 dielectric and a 1-μm long field-plate on the composite Al 2 O 3 /TiO 2 oxides. The present Γ-Gate MOS-HFET has demonstrated excellent on/off current ratio (I on /I off ) of 8.2 x 1010, subthreshold swing of 102.3 mV/dec, maximum extrinsic transconductance of (g m,max ) of 210.1 mS/mm, maximum drain-source saturation current density (I DS,max ) of 868.3 mA/mm, two-terminal off-state gate-drain breakdown voltage (BVGD) of -311.2 V, three-terminal drain-source breakdown voltage (BVDS) of 237 V at V GS = -10 V, and power-added efficiency of 39.9% at 2.4 GHz. A conventional Schottky-gate HFET and TiO 2 -dielectric MOS-HFET were also prepared in comparison. The present design has shown superior dc/RF device performance. It is suitable for high-power RF circuit applications.

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Polarization induced doping and high-k passivation engineering on T-gate MOS-HEMT for improved RF/microwave performance

High Performance Submicron Inversion-Type Enhancement-Mode InGaAs MOSFETs with ALD Al2O3, HfO2 and HfAlO As Gate Dielectrics

Comparative Study of Si3N4-PECVD and Al2O3-ALD Surface Passivation in T-Shaped Gate InAlAs/InGaAs InP Based HEMTs

Arbitrary Alloy Semiconductor Material Based DG MOSFET for High-Frequency Industrial and Hybrid Consumer Applications

Enhanced Performances of AlGaN/GaN HEMTs with Dielectric Engineering of HfZrOx

Investigations on In0.12Al0.88N/AlN/AlxGa1−xN/In0.12Al0.88N MOS-HFETs With Symmetrically-Graded Wide-Gap Channel and Drain Field-Plate Design

Impact of High-K Gate Dielectric Materials on Uniformly Doped Dual Gate FinFET for Analog and Digital Applications

Characteristics of sub-1 nm CVD HfO2 gate dielectrics with HfN electrodes for advanced CMOS applications

High-performance Inversion-type E-mode In0.65Ga0.35As MOSFETs with ALD HfO2 as Gate Dielectric

Effects of Hafnium Oxide on Surface Potential and Drain Current Models for Subthreshold Short Channel Metal–Oxide–Semiconductor-Field-Effect-Transistor

Characteristics of Submicron-Footprint TiO2 Based AlGaN/GaN MOSHEMT on SiC Substrate

Charactcristics Of Sub-1 Nm Cvid Hfo2 Gate Dielectrics With Hfn Electrodcs For Advanccd Cmos Applications

Characteristics of sub-1 nm CVD HfO/sub 2/ gate dielectrics with HfN electrodes for advanced CMOS applications

Al2O3-Dielectric InAlN/AlN/GaN ${\gamma}$ -Gate MOS-HFETs with Composite Al2O3/TiO2 Passivation Oxides

DC and RF Characteristics of AlGaN/GaN/InGaN/GaN Double-Heterojunction HEMTs

Low-frequency noise in Si0.7Ge0.3 surface channel pMOSFETs with ALD HfO2/Al2O3 gate dielectrics

High-Efficiency AlGaN/GaN/Graded-AlGaN/GaN Double-Channel HEMTs for Sub-6G Power Amplifier Applications

Al<sub>2</sub>O<sub>3</sub>-Dielectric InAlN/AlN/GaN <inline-formula> <tex-math notation="LaTeX">${\Gamma}$ </tex-math></inline-formula>-Gate MOS-HFETs With Composite Al<sub>2</sub>O<sub>3</sub>/TiO<sub>2</sub> Passivation Oxides

DC and RF performance analysis of enhancement mode fin-shaped tri-gate AlGaN/GaN HEMT and MOSHEMT with ultra-thin barrier layer