Abstract:Gallium oxide (Ga2O3) is a promising ultra-wide bandgap material offering a large bandgap (>4.7 eV) and high critical electric fields. The increasing demand for electronic devices for high-power applications in electric automobiles, high-performance computing, green energy technologies, etc., requires higher voltages and currents with enhanced efficiency. Vertical transistors, such as fin-shaped field-effect transistors (FinFETs) have emerged to meet the growing need with improved current handling capabilities, reduced resistance, and enhanced thermal performance. However, to fully exploit the Ga2O3 power transistors, precise and reliable physics-driven models are crucial. Therefore, a comprehensive surface potential model has been developed in this work for a vertical Ga2O3 FinFET. The electric potential across the channel is explained by analyzing the two-dimensional (2D) Poisson equation employing parabolic approximation. Such a surface potential model is instrumental in determining the performance of the Ga2O3 FinFET as it affects the threshold voltage, the drain current, and fringing capacitance. Exploiting the surface potentials, a fringing capacitance model is derived which is crucial in analyzing the speed of the device in compact integrated circuits. In addition, statistical analysis of the Ga2O3 FinFET using the Monte Carlo simulation technique is performed to determine the leakage current fluctuation due to doping variations. The validation of the analytical model with experimental results confirms the effectiveness and prospects of the developed models in the rapid development and characterization of next-generation high-performance vertical Ga2O3 power transistors.

Effects of Hafnium Oxide on Surface Potential and Drain Current Models for Subthreshold Short Channel Metal–Oxide–Semiconductor-Field-Effect-Transistor

Analytical Modeling and Simulation of Dual-Material Surrounding-Gate Metal–Oxide–Semiconductor Field Effect Transistors with Single-Halo Doping

Two-dimensional model of fully depleted dual-material-gate single-halo SOI MOSFET

A dual gate material tunnel field effect transistor model incorporating two‐dimensional Poisson and Schrodinger wave equations

A Rigorous and Concise Surface Potential-Based Core Model for the Undoped Symmetric Double-Gate Metal-Oxide-Semiconductor Field Effect Transistors

Short-Channel-Effect Modeling of Dg-Fets Using Voltage-Doping Transformation Featuring Fd/Pd Modes

Threshold Voltage Modeling of Partially-Depleted Dual-Material Surrounding Gate Field-Effect Transistor

Subthreshold current model of fully depleted dual material gate SOI MOSFET

Accurate 2-D analytical model for cylindrical gate-junctionless ferroelectric-nanowire (CG-JFe-NW) MOSFET with scaled channel length.

Two-Dimensional Analytic Model for Fully Depleted Surrounding Gate Metal-Oxide-Semiconductor Field-Effect Transistor

Analytical Charge-Control and I-V Model for Submicrometer Anddeep-Submicrometer MOSFETs Fully Comprising Quantum Mechanical Effects

Analysis and Simulation of Schottky Tunneling Using Schottky Barrier FET with 2-D Analytical Modeling

Characterization and Analysis of Two-dimensional Hydrogenated Nanocrystalline-diamond Metal Oxide Semiconductor Field Effect Transistor (MOSFET) using Different Surface Charge Models with Device Simulation

An analytical model of the surface-potential-based source-pocket-doped cylindrical-gate tunnel FET with a work-function-modulated metal gate

Modeling of Anisotropic Two-Dimensional Materials Monolayer HfS2 and Phosphorene MOSFETs

Analytical model for 2DEG charge density in β-(Al x Ga1−x )2O3/Ga2O3 HFET

Analytical Model for Threshold Voltage of Hetero-Gate SOI MOSFET with Asymmetric Halo

Two-dimensional analytical modeling of the surface potential and drain current of a double-gate vertical t-shaped tunnel field-effect transistor

Direct Tunneling Current Model for MOS Devices with Ultra-Thin Gate Oxide Including Quantization Effect and Polysilicon Depletion Effect

Physics-based modeling of surface potential and leakage current for vertical Ga2O3 FinFET

Analytical Modeling of $I-V$ characteristics using 2D Poisson Equations in AlN/$β$-Ga$_2$O$_3$ HEMT