Abstract:Diamond has great potential applications in high-power, high-frequency semiconductor devices because of its wide band gap (5.5 eV), high thermal conductivity (22W/(cm·K)), and high carrier mobility (4500 cm2/(V·s) for electron, and 3800 cm2/(V·s) for hole). It has been widely considered as an ultimate semiconductor. From the analysis of our previous work, we find that the output current of field effect transistor based on hydrogen-terminated polycrystalline diamond is usually larger than that based on single crystal diamond, and that the preferential orientations of the polycrystalline diamond are mainly \begin{document}$ \langle 110\rangle $\end{document} and \begin{document}$ \langle 111\rangle $\end{document} shown by XRD results. Therefore, in order to further analyze the effect of surface orientation on the device performance of hydrogen-terminated diamond field effect transistor (FET), we study the devices fabricated respectively on the (110) plane and (111) plane single crystal diamond plates obtained from a single 3.5-mm-thick single crystal diamond grown by the microwave plasma chemical vapor deposition on the high-pressure high-temperature synthesized diamond substrate. Prior to processing the device, these diamond plates are characterized by atomic force microscope, Raman spectra and photoluminescence (PL) spectra. The results of Raman and PL spectra show that (110) plane and (111) plane plates originating from the same CVD single crystal diamond have no significant difference in optical property. Then the normally-on hydrogen-terminated diamond FET with a gate length of 6 μm is achieved. The device on (111) plane delivers a saturation drain current of 80.41 mA/mm at a gate voltage VGS = –4 V, which is approximately 1.4 times that of the device on (110) plane. Meanwhile, the on-resistance of the device on (111) plane is 48.51 Ω·mm, and it is only 67% of the device on (110) plane. Analyses of the capacitance-voltage show that the hole concentration of the gated device on (110) plane and (111) plane are 1.34 × 1013 cm–2 and 1.45 × 1013 cm–2, respectively, approximately at the same level. In addition, the hole density of the device on both (110) and (111) plane increase near-linearly with the increase of gate voltage from the threshold voltage to – 4 V, indicating that the control effect of the gate on the carrier in the channel is uniform. The possible reason for the higher saturation drain current as well as the lower on-resistance of the device on (111) plane is that its sheet resistance is lower.

Characterization and Analysis of Two-dimensional Hydrogenated Nanocrystalline-diamond Metal Oxide Semiconductor Field Effect Transistor (MOSFET) using Different Surface Charge Models with Device Simulation

An enhanced two-dimensional hole gas (2DHG) C-H diamond with positive surface charge model for advanced normally-off MOSFET devices

Analytical Modeling and Simulation of Dual-Material Surrounding-Gate Metal–Oxide–Semiconductor Field Effect Transistors with Single-Halo Doping

High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors

Effects of Hafnium Oxide on Surface Potential and Drain Current Models for Subthreshold Short Channel Metal–Oxide–Semiconductor-Field-Effect-Transistor

Preparation of High Conductivity Hydrogenated Silicon-Doped Diamond and MOSFET

High Performance of Normally‐On and Normally‐Off Devices with Highly Boron‐Doped Source and Drain on H‐Terminated Polycrystalline Diamond

MOSFETs on (110) C–H Diamond: ALD Al2O3/Diamond Interface Analysis and High Performance Normally-OFF Operation Realization

MOSFETs on (110) C-H Diamond: ALD Al<sub>2</sub>O<sub>3</sub>/Diamond Interface Analysis and High Performance Normally-OFF Operation Realization

Research on the Hydrogen Terminated Single Crystal Diamond MOSFET with MoO 3 Dielectric and Gold Gate Metal

Electrical Characteristics of Diamond MOSFET with 2DHG on a Heteroepitaxial Diamond Substrate

Electrical Characteristics of Normally off Hydrogen-Terminated Diamond Field Effect Transistors with Lanthanum Oxide Gate Dielectric

Analytical Charge Model for MOSFETs with 2-D Quantum Mechanical Effects

Characteristics of Hydrogen-Terminated Single Crystalline Diamond Field Effect Transistors with Different Surface Orientations

Performance and Analytical Modelling of Halo-Doped Surrounding Gate Mosfets

A Complete Carrier-Based Non-Charge-Sheet Analytic Model for Nano-Scale Undoped Symmetric Double-Gate MOSFETs

Characterization and Mobility Analysis of Moo3-Gated Diamond Mosfet

Accurate 2-D analytical model for cylindrical gate-junctionless ferroelectric-nanowire (CG-JFe-NW) MOSFET with scaled channel length.

Two-dimensional model of fully depleted dual-material-gate single-halo SOI MOSFET

Estimation of Hole Mobility in Hydrogen-Terminated Diamond MOSFET with High-K Stacked Gate Dielectrics

Normally-Off Oxidized Si-Terminated (111) Diamond MOSFETs via ALD-Al 2 O 3 Gate Insulator With Drain Current Density Over 300 mA/mm