Abstract:A new analytical current-voltage (I-V) model for submicrometer and deep-submicrometer metal-oxide-semiconductor field-effect transistors (MOSFETs) is developed based on a newly developed charge-control model for the metal-oxide-semiconductor structure. Threshold-voltage shift due to quantum mechanical effects, finite inversion layer thickness effects (inversion layer capacitance), as well as increased depletion layer charge density after the strong inversion point are incorporated in the model. Inversion layer charge density with respect to the gate voltage from depletion through weak inversion to strong inversion regions with smooth transition between different regions is given by one expression. Two-dimensional short channel effects such as channel length modulation, drain-induced barrier lowering, mobility degradation, and carrier velocity saturation, as well as polysilicon depletion effects are included in the I-V model. Model results are compared with both numerical results of carrier sheet density and surface potential in the channel, and experimental results of I-V data for submicrometer and deep-submicrometer MOSFETs down to 0.09-/spl mu/m effective gate length and the accuracy of the model are demonstrated.

Analytical Charge Model for MOSFETs with 2-D Quantum Mechanical Effects

A Unified Charge Model Comprising Both 2D Quantum Mechanical Effects in Channels and in Poly-Silicon Gates of MOSFETs

2D Quantum Mechanical (QM) Charge Model and Its Application to Ballistic Transport of Sub-50nm Bulk Silicon MOSFETs

Analytical Charge-Control and I-V Model for Submicrometer Anddeep-Submicrometer MOSFETs Fully Comprising Quantum Mechanical Effects

Threshold Voltage Correction Model For Quantum Short Channel Effects In Decanano-Scaled Mosfets

Fully Analytical Carrier-Based Charge and Capacitance Model for Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

Analytical Quantum Modeling of Inversion Charge Density for Nanoscale Undoped Symmetric DG-MOSFETs

Threshold voltage correction model for quantum short channel

Compact I-V Model for Sub-100nm Bulk Silicon MOSFETs

A Two-Dimensional Analytical Model for Short Channel Junctionless Double-Gate MOSFETs

Simulation of Advanced N-Mosfet Emphasizing Quantum Mechanical Effects on 2-D Characteristics

An Analytic Model to Account for Quantum–Mechanical Effects of MOSFETs Using a Parabolic Potential Well Approximation

A 2D Analytical Model for SCEs in MOSFETs with High-K Gate Dielectric

A Complete Carrier-Based Non-Charge-Sheet Analytic Model for Nano-Scale Undoped Symmetric Double-Gate MOSFETs

Analytical Model of the Subthreshold Behavior in Short-Channel Junctionless Cylindrical Surrounding-Gate Mosfets

MOS device threshold voltage model considering quantum mechanical effect including multi-subband occupation

Ballistic MOS Model (BMM) Considering Full 2D Quantum Effects

A Charge-Based Capacitance Model for Double-Gate Tunnel FETs With Closed-Form Solution

A New Charge Model Including Quantum Mechanical Effects in MOS Structure Inversion Layer

Quantum Mechanical Effects on Deep-Submicron MOSFET Subthreshold Characteristics