Abstract:This paper presents a carrier-based continuous analytic I-V model for long channel undoped (lightly doped) Ultra-Thin-Body Silicon-on-insulator (UTB-SOI) MOSFETs. It is based on the solution of Poisson-Boltzmann equation, and the current continuity equation of Pao-Sah current formulation in terms of the mobile carrier concentration under an appropriate boundary approximation. The model is continuous and valid for all the operation regions (linear, saturation, sub-threshold) and traces the transition between them. This preliminary model has been verified by comparing with long channel results generated by two-dimensional simulator. The predicted I-V characteristics also show in a good agreement with two-dimensional numerical simulations for all ranges of gate and drain voltages, proving the validity of the analytical model. All these indicate that this model will be an ideal core model for UTB MOSFET modelling if the appropriate second-order effects such as quantum mechanical effect, doping profile effect, short-channel effects, and poly-depletion effect are integrated into it.

A Complete Carrier-Based Non-Charge-Sheet Analytic Model for Nano-Scale Undoped Symmetric Double-Gate MOSFETs

A Carrier-Based Analytic Model for the Undoped Symmetric Double-Gate MOSFETs

A Complete Carrier-Based Non-Charge-Sheet Analytic Theory for Nano-Scale Undoped Surrounding-Gate MOSFETs

A Non-Charge-Sheet Based Analytical Model of Undoped Symmetric Double-Gate MOSFETs Using SPP Approach.

A non-charge-sheet analytic theory for undoped symmetric double-gate MOSFETs from the exact solution of Poisson's equation using SPP approach

A Carrier-Based Approach for Compact Modeling of the Long-Channel Undoped Symmetric Double-Gate MOSFETs

A carrier-based analytic model for undoped surrounding-gate MOSFETs

A Non-Charge-Sheet Analytic Model for Symmetric Double-Gate MOSFETs With Smooth Transition Between Partially and Fully Depleted Operation Modes

Extended Version of Carrier-Based Analytical Model to Account for the Doped Effect of Symmetric Double-Gate MOSFETs

An Explicit Current–voltage Model for Undoped Double-Gate MOSFETs Based on Accurate Yet Analytic Approximation to the Carrier Concentration

Carrier-based Compact Modeling of Charge and Capacitance of Long Channel Undoped Symmetric Double-Gate MOSFETs

A Unified Carrier-Based Model for Undoped Symmetric Double-Gate and Surrounding-Gate Mosfets

A Complete Surface Potential-Based Core Model for Undoped Symmetric Double-Gate MOSFETs

A Carrier-Based Analytic Model for Undoped (Lightly Doped) Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs

Analytical Quantum Modeling of Inversion Charge Density for Nanoscale Undoped Symmetric DG-MOSFETs

A Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-on-Insulator ( UTB-SOI ) MOSFETs

An Exact Analytic Model of Undoped Body MOSFETs using the SPP Approach

A complete surface potential-based core model for the undoped symmetric double-gate MOSFETs

A carrier-based analytic model for undoped Ultra-Thin-Body Silicon-on-insulator (UTB-SOI)MOSFETS

Fully Analytical Carrier-Based Charge and Capacitance Model for Hetero-Gate-Dielectric Tunneling Field-Effect Transistors