An Explicit Current–voltage Model for Undoped Double-Gate MOSFETs Based on Accurate Yet Analytic Approximation to the Carrier Concentration

Jin He,Wei Bian,Yadong Tao,Feng Liu,Kailiang Lu,Wen Wit,Ting Wang,Mansun Chan

DOI: https://doi.org/10.1016/j.sse.2006.11.010

IF: 1.916

2007-01-01

Solid-State Electronics

Abstract:An explicit current–voltage model for undoped double-gate MOSFETs based on an accurate analytic approximation to the carrier concentration is presented in this paper. An analytic approximation solution to the carrier (electron) concentration is derived from the Taylor expansion of the exact solution of the Poisson equation. This analytic approximation gives a highly accurate result of the electron concentration when compared with that evaluated by Newton–Raphson iterative. The resulting electron concentration is then coupled to the Pao–Sah current equation to produce an explicit current–voltage model for symmetric undoped double-gate MOSFETs. The model predictions have been extensively validated by numerical simulations.