Abstract:This paper presents for the first time a continuous analytic I-V model for long-channel undoped (lightly doped) ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs from a carrier-based approach. It is based oil the solution of the Poisson-Boltzmann equation and the Current continuity equation of the Pao-Sah current formulation in terms of the mobile carrier concentration under art appropriate boundary approximation. The model is continuous and valid for all the operation regions (linear, saturation and sub-threshold) and traces the transitions between them. This preliminary model has been verified by comparison with long-channel results generated by a two-dimensional simulator. The predicted I-V characteristics also show a good agreement with two-dimensional numerical simulations for all ranges of gate and drain voltages, proving the validity of the analytical model. All these indicate that this model will be an ideal core model for UTB MOSFET modelling if the appropriate second-order effects Such as the quantum-mechanical effect, doping-profile effect, short-channel effect and poly-depletion effect are integrated into it.

An Exact Analytic Model of Undoped Body MOSFETs using the SPP Approach

A Physics Based Analytical Model Of Undoped Body Mosfets

A Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-on-Insulator ( UTB-SOI ) MOSFETs

A carrier-based analytic model for undoped surrounding-gate MOSFETs

A carrier-based analytic model for undoped Ultra-Thin-Body Silicon-on-insulator (UTB-SOI)MOSFETS

A Carrier-Based Analytic Model for the Undoped Symmetric Double-Gate MOSFETs

A Charge-Based Model for Long-Channel Cylindrical Surrounding-Gate MOSFETs from Intrinsic Channel to Heavily Doped Body

A Rigorous Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-On-Insulator (Utb-Soi) Mosfets

An approximate carrier-based compact model for fully depleted surrounding-gate MOSFETs with a finite doping body

A Carrier-Based Analytic Model for Undoped (Lightly Doped) Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs

A Non-Charge-Sheet Based Analytical Model of Undoped Symmetric Double-Gate MOSFETs Using SPP Approach.

An approximate carrier-based compact model for fully depleted surrounding-gate MOSFETs with finite doping body

A Continuous Analytic Model for Undoped (lightly Doped) Cylindrical Surrounding-Gate Mosfets by A Carrier-Based Approach

An analytic potential-based model for undoped nanoscale surrounding-gate MOSFETs

A continuous analytic <i>I</i>–<i>V</i> model for long-channel undoped ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs from a carrier-based approach

A non-charge-sheet analytic theory for undoped symmetric double-gate MOSFETs from the exact solution of Poisson's equation using SPP approach

A Complete Carrier-Based Non-Charge-Sheet Analytic Model for Nano-Scale Undoped Symmetric Double-Gate MOSFETs

An Explicit Current–voltage Model for Undoped Double-Gate MOSFETs Based on Accurate Yet Analytic Approximation to the Carrier Concentration

A Unified Charge-Based Model for SOI MOSFETs Applicable from Intrinsic to Heavily Doped Channel

A charge-based compact model for arbitrary doped cylindrical surrounding-gate MOSFETs

A unified charge-based model for SOI MOSFETs valid from intrinsic to heavily doped channel