Abstract:This paper presents for the first time a continuous analytic I-V model for long-channel undoped (lightly doped) ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs from a carrier-based approach. It is based oil the solution of the Poisson-Boltzmann equation and the Current continuity equation of the Pao-Sah current formulation in terms of the mobile carrier concentration under art appropriate boundary approximation. The model is continuous and valid for all the operation regions (linear, saturation and sub-threshold) and traces the transitions between them. This preliminary model has been verified by comparison with long-channel results generated by a two-dimensional simulator. The predicted I-V characteristics also show a good agreement with two-dimensional numerical simulations for all ranges of gate and drain voltages, proving the validity of the analytical model. All these indicate that this model will be an ideal core model for UTB MOSFET modelling if the appropriate second-order effects Such as the quantum-mechanical effect, doping-profile effect, short-channel effect and poly-depletion effect are integrated into it.

A Rigorous Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-On-Insulator (Utb-Soi) Mosfets

A Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-on-Insulator ( UTB-SOI ) MOSFETs

A carrier-based analytic model for undoped Ultra-Thin-Body Silicon-on-insulator (UTB-SOI)MOSFETS

A Carrier-Based Analytic Model for Undoped (Lightly Doped) Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs

A continuous analytic <i>I</i>–<i>V</i> model for long-channel undoped ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs from a carrier-based approach

A Physical Threshold Voltage Model of Nanoscale Ultra-thin Body Ultra-thin Box SOI MOSFETs with a Gaussian Doping Profile

A carrier-based analytic model for undoped surrounding-gate MOSFETs

A Unified Charge-Based Model for SOI MOSFETs Applicable from Intrinsic to Heavily Doped Channel

An Exact Analytic Model of Undoped Body MOSFETs using the SPP Approach

A unified charge-based model for SOI MOSFETs valid from intrinsic to heavily doped channel

A Carrier-Based Analytic Model for the Undoped Symmetric Double-Gate MOSFETs

Analytical Subthreshold Current Modeling of Nanoscale Ultra-Thin Body Ultra-Thin Box SOI MOSFETs with a Vertical Gaussian Doping Profile

A Subthreshold Current Model of Fully-Depleted Silicon-on-Insulator Metal–Oxide–Semiconductor Field Effect Transistors with Vertical Gaussian Profile

An Analytical Subthreshold Swing Model for Fully-Depleted MOSFETs with Vertical Gaussian Profile Fabricated on Modified Silicon-on-insulator Wafers

A carrier-based analytic DCIV model for long channel undoped cylindrical surrounding-gate MOSFETs

A Carrier-Based Approach for Compact Modeling of the Long-Channel Undoped Symmetric Double-Gate MOSFETs

Two-dimensional analytical model for a non-lightly doped drain SOI MOSFET

Analytic modeling of potential and threshold voltage for short-channel thin-body fully depleted silicon-on-insulator MOSFETs with a vertical Gaussian doping profile

Analytic subthreshold slope model for deep-submicrometer fully depleted SOI MOSFET's

A Physics Based Analytical Model Of Undoped Body Mosfets

A Unified Carrier-Based Model for Undoped Symmetric Double-Gate and Surrounding-Gate Mosfets