Abstract:A new analytical current-voltage (I-V) model for submicrometer and deep-submicrometer metal-oxide-semiconductor field-effect transistors (MOSFETs) is developed based on a newly developed charge-control model for the metal-oxide-semiconductor structure. Threshold-voltage shift due to quantum mechanical effects, finite inversion layer thickness effects (inversion layer capacitance), as well as increased depletion layer charge density after the strong inversion point are incorporated in the model. Inversion layer charge density with respect to the gate voltage from depletion through weak inversion to strong inversion regions with smooth transition between different regions is given by one expression. Two-dimensional short channel effects such as channel length modulation, drain-induced barrier lowering, mobility degradation, and carrier velocity saturation, as well as polysilicon depletion effects are included in the I-V model. Model results are compared with both numerical results of carrier sheet density and surface potential in the channel, and experimental results of I-V data for submicrometer and deep-submicrometer MOSFETs down to 0.09-/spl mu/m effective gate length and the accuracy of the model are demonstrated.

A two-dimensional physically-based current model for deep-submicrometer SOI dynamic threshold-voltage MOSFET

Quasi-two-dimensional Subthreshold Current Model of Deep Submicrometer SOI Drive-in Gate Controlled Hybrid Transistors with Lateral Non-Uniform Doping Profile.

Two-dimensional analytical model for a non-lightly doped drain SOI MOSFET

Analytical Charge-Control and I-V Model for Submicrometer Anddeep-Submicrometer MOSFETs Fully Comprising Quantum Mechanical Effects

A noncharge-sheet channel potential and drain current model for dynamic-depletion silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Analytic subthreshold slope model for deep-submicrometer fully depleted SOI MOSFET's

New physical I-V model of deep-submicron FD SOI MOSFETs for analogue/digital circuit simulation

A Rigorous Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-On-Insulator (Utb-Soi) Mosfets

A Unified Charge-Based Model for SOI MOSFETs Applicable from Intrinsic to Heavily Doped Channel

Physical-Based Threshold Voltage and Mobility Models Including Shallow Trench Isolation Stress Effect on Nmosfets

A carrier-based analytic model for undoped Ultra-Thin-Body Silicon-on-insulator (UTB-SOI)MOSFETS

Modeling On Direct Tunneling Current In Ultra-Thin Oxide Nmosfet Considering Quantum Mechanics

Analytical Modeling of Threshold Voltage for Double Gate MOSFET

A Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-on-Insulator ( UTB-SOI ) MOSFETs

A Two-Dimensional Analytical Model for Short Channel Junctionless Double-Gate MOSFETs

Electric Potential and Threshold Voltage Models for Double-Gate Schottky-barrier Source/drain MOSFETs

Direct Tunneling Current Model for MOS Devices with Ultra-Thin Gate Oxide Including Quantization Effect and Polysilicon Depletion Effect

A Charge-Based Intrinsic Capacitance Model For Thin-Film Soi Short-Channel Mosfet

A Carrier-Based Analytic Model for Undoped (Lightly Doped) Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs

Modeling of the Influence on Effective $\textit{v}_{\text{th}}$ from Interface States, Short Channel Effects, and Contact Resistance in SiC MOSFETs

A unified charge-based model for SOI MOSFETs valid from intrinsic to heavily doped channel