Abstract:A partially-depleted dual-material surrounding-gate metal-oxide-semiconductor field-effect-transistor (MOSFET) structure (DMSG) is proposed to suppress the short channel effect and to increase the current drivability. Two-dimensional analytical models for both surface potential and threshold voltage are respectively presented for the novel structure. The dual-material surrounding gate consists of two metals connecting tightly with different work functions, and it can produce the electric field peak near the source in the channel, decrease the electric field near the drain, and mask the influence of the drain voltage on the minimum surface potential. The potential Poisson equations in the two depleted divisions are given with the boundary conditions in the cylindrical coordinate system. The analytical models are derived based on the solution of the partial differential equations through reducing the dimensions with parabolic potential approximation in the direction vertical to the channel. Numerical simulation and comparisons with the traditional partially depleted device show that the DMSG device increases the carrier transport efficiency, and suppresses the short channel effect, drain-induced barrier lowering effect and hot carrier effect, and that the relative error between the derived analytical model and the numerical simulation software is less than 5%.

Analytical Modeling of Threshold Voltage for Double Gate MOSFET

Threshold Voltage Model of a Double-Gate MOSFET with Schottky Source and Drain

Analysis of Threshold Voltage Decreasing for Double-Gate and Surrounding-Gate MOSFET's

Electric Potential and Threshold Voltage Models for Double-Gate Schottky-barrier Source/drain MOSFETs

Threshold Voltage Modeling of Deep-Submicron Double-Gate Fully-Depleted SOI MOSFET

Analytical threshold voltage model using NEGF approach for nanoscale double-gate MOSFETs

An Analytical Potential Model of Double-Gate MOSFETs with Schottky Source/Drain

Quantum Mechanical Effects on the Threshold Voltage of Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Threshold Voltage Modelling of Linearly Graded Binary Metal Alloy Gate Electrode with DP MOSFET

Improved Analytical Model of Surface Potential with Modified Boundary Conditions for Double Gate Tunnel FETs.

Random Dopant Induced Threshold Voltage Fluctuations in Double Gate Mosfet'S

Two-Dimensional Threshold Voltage Analytical Model of Dmg Strained-Silicon-On-Insulator Mosfets

An Analytical Model for Threshold Voltage of Grooved-Gate MOSFET's

Analytical models for the electric potential, threshold voltage and drain current of long-channel junctionless double-gate transistors

Threshold Voltage Modeling of Partially-Depleted Dual-Material Surrounding Gate Field-Effect Transistor

Threshold Voltage Model for MOSFETs with High-K Gate Dielectrics

Threshold Voltage Model for Deep-Submicrometer MOSFET's

Models on threshold voltage/subthreshold swing and structural design of high-k gate dielectric GeOI MOSFET

A Two-Dimensional Analytical Model for Short Channel Junctionless Double-Gate MOSFETs

An Analytic Model for Channel Potential and Subthreshold Swing of the Symmetric and Asymmetric Double-Gate MOSFETs

Threshold voltage model of the surface Ge channel pMOSFET