Abstract:The field effect transistor fabricated in integrated circuits are majorly with junctions. Due to scaling of devices, these junctions have becoming increasingly difficult to fabricate. And also high doping concentration gradient is the stringent requirement for smooth functioning of the device. The newer devices have been proposed and demonstrated in which there are no junctions and no gradients of doping. One such device is the Double Gate Metal Oxide Semiconductor Field Effect Transistor (DG-MOSFET) without junction which shows remarkable performance against short channel effects such as threshold voltage roll-off, Drain Induced Barrier Lowering (DIBL), etc. In this paper, a two dimensional model of threshold voltage is considered to study the performance of DG-MOSFET. The model used shows how the DG-MOSFET parameters such as the gate channel length, gate oxide thickness, drain to source voltage, and channel thickness, affect the threshold voltage degradation.

Threshold Voltage Model for MOSFETs with High-K Gate Dielectrics

A 2D Analytical Model for SCEs in MOSFETs with High-K Gate Dielectric

Fringe-Induced Barrier Lowering (fibl) Included Sub-Threshold Swing Model for Double-Gate Mosfets

Modeling of charge trapping induced threshold-voltage instability in high-/spl kappa/ gate dielectric FETs

Numerical Investigation of Low Frequency Noise in MOSFETs with High-k Gate Stacks

Threshold Voltage Model of a Double-Gate MOSFET with Schottky Source and Drain

Analytical Modeling of Threshold Voltage for Double Gate MOSFET

Analysis of Threshold Voltage Decreasing for Double-Gate and Surrounding-Gate MOSFET's

Gate Current for MOSFETs with High k Dielectric Materials

Electric Potential and Threshold Voltage Models for Double-Gate Schottky-barrier Source/drain MOSFETs

Analytical Model for High Current Density Trench Gate Mosfet

A Semi-Empirical Analytic Model for Threshold Voltage Instability in MOSFETs with High-Kgate Stacks

An analytical threshold voltage model of halo-implanted MOSFETs

Threshold Voltage Modelling of Linearly Graded Binary Metal Alloy Gate Electrode with DP MOSFET

An Analytical Potential Model of Double-Gate MOSFETs with Schottky Source/Drain

Compact I-V Model for Sub-100nm Bulk Silicon MOSFETs

Characterization of Sub-100nm MOSFETs with High K Gate Dielectric

Threshold Voltage Model for 2-D FETs with Undoped Body and Gated Source

Density functional model of threshold voltage shifts at High-K/Metal gates

Direct Tunneling Current Model for MOS Devices with Ultra-Thin Gate Oxide Including Quantization Effect and Polysilicon Depletion Effect

Modeling of Gate Tunneling Current for Nanoscale MOSFETs with High-k Gate Stacks