Abstract:In this paper, we present a comprehensive investigation the impact of various high-k gate materials on both breakdown voltage and drain current of a vertical 4H-SiC-based power MOSFET, operating in the quasi-saturation regime. The device electrical behavior is numerically investigated using a TCAD-based computation provided by ATLAS 2D simulator. Moreover, the performance parameters, governing the power MOSFET breakdown characteristics are extracted in order to reveal the role of the high-k gate materials in improving the transistor electrical performance. The effect of the dielectric permittivity on the derived current capability in also analyzed. After, we conduct a sensitivity analysis of the breakdown voltage with several high-k materials (Al2O3, HfSiO4, HfO2, and TiO2) and different dielectric thicknesses. It is found that the proposed power MOSFET design exhibits improved electrical behavior not only enables enhancing the drain current but also allows achieving superior breakdown performance as compared to the conventional design, making it suitable for high-performance power electronic applications.

Gate Current for MOSFETs with High k Dielectric Materials

Numerical Investigation of Low Frequency Noise in MOSFETs with High-k Gate Stacks

Direct Tunneling Current Model for MOS Devices with Ultra-Thin Gate Oxide Including Quantization Effect and Polysilicon Depletion Effect

Modeling of Gate Tunneling Current for Nanoscale MOSFETs with High-k Gate Stacks

Gate current modeling of high-k stack nanoscale MOSFETs

Analytical Model for High Current Density Trench Gate Mosfet

Reduction of Gate Current in Nanoscale MOS Devices

Threshold Voltage Model for MOSFETs with High-K Gate Dielectrics

Modeling of Tunneling Current Through Hf-based Dielectric Films for Nanoscale MOSFET

Simulation Research of 4H-SiC Double-Trench MOSFET with High-k Gate Dielectric Materials

Modeling of direct tunneling current through interfacial oxide and high-K gate stacks

Fringe-Induced Barrier Lowering (fibl) Included Sub-Threshold Swing Model for Double-Gate Mosfets

Modeling of Gate Current and Capacitance for Nanoscale MOSFETs with High-k Stacks

Characteristics of Sub-100 nm High-k Gate Dielectrics MOSFETs With Different Source / Drain Structure

Computation of Direct Tunneling gate leakage currents in nano-MOSFETs using ensemble Full Band Monte Carlo with quantum correction

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture.

Characterization of Sub-100nm MOSFETs with High K Gate Dielectric

Modeling of Gate Current and Capacitance in Nanoscale-MOS Structures

Numerical Analysis of 4H-SiC MOSFET Design Including High-k Gate Dielectrics for Power electronic Applications

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction