Abstract:The ability of Ultra-Thin-Body (UTB) MOS devices to enable channel length scaling can only be realistically assessed by accurately taking key physical effects such as Quantum Confinement effects (QCEs) and Short channel effects (SCEs) into account. QCEs can accurately be considered only through a full band structure-based approach, which tends to be computationally inefficient, particularly at higher channel thicknesses, and is further exacerbated when required to be used to calculate 2-D channel electrostatics. Therefore, in this work, we propose a methodology to efficiently simulate the channel electrostatics of a UTB Double Gate MOSFET by solving the 1-D band structure with the 2-D Poisson's equation self consistently, determined by using the semi-empirical tight-binding approach only over those k-points that are likely to have a significant effect on the electrostatics. By showing that determining the 1-D Band structure at the source-channel junction is adequate to accurately determine the 2-D channel electrostatics, we show that this approach remains computationally tractable even at higher channel lengths. By following this approach, we obtain the 2-D profile of important device parameters such as electron density and channel potential, which, in turn, enables the determination of the thermionic current density and source-to-drain tunneling current density for a wide range of device parameters using Tsu-Esaki and WKB formalism respectively. Furthermore, the effect of phonon scattering, which is likely to manifest at longer channel lengths, is also incorporated in the drain current calculation, thus making this approach widely applicable.

Computation of Direct Tunneling gate leakage currents in nano-MOSFETs using ensemble Full Band Monte Carlo with quantum correction

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Investigation of Gate Current in Nano-Scale Mosfets by Monte Carlo Solution of Quantum Boltzmann Equation

Modeling On Direct Tunneling Current In Ultra-Thin Oxide Nmosfet Considering Quantum Mechanics

Computationally Efficient Band Structure-Based Approach for Accurately Determining Electrostatics and Source-to-Drain Tunneling Current in UTB MOSFETs

Study of 20nm bulk FINFET by using 3D full band Monte Carlo method with Effective Potential Quantum Correction

Direct Tunneling Current Model for MOS Devices with Ultra-Thin Gate Oxide Including Quantization Effect and Polysilicon Depletion Effect

Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

Gate tunneling in nanowire MOSFETs

3D Monte Carlo Simulation of gate-All-around germanium nMOSFET with Effective potential Quantum Correction.

Impact of Gate Dielectric Geometry on the Nanowire MOSFETs Performance and Scaling

Engineering of S/D Lateral Diffusion for DG-FETs Based on Full Quantum Analysis

Direct tunneling current model for circuit simulation

Numerical Study On Dual Material Gate Nanowire Tunnel Field-Effect Transistor

Simulation Of Source-To-Drain (S/D) Tunneling In Sub-10nm Dg Mosfets With Wkb Method

A Gate Leakage Model for Double Gate Tunneling Field-Effect Transistors

Two-dimensional quantum effects in “ultimate” nanoscale metal-oxide-semiconductor field-effect transistors

Characterization and modeling of edge direct tunneling (EDT) leakage in ultrathin gate oxide MOSFETs

A Physical Current Model for Multi-Finger Gate Tunneling FET with Schottky Junction

Numerical Study on a Lateral Double-Gate Tunnelling Field Effect Transistor