Modeling CMOS tunneling currents through ultrathin gate oxide due to conduction- and valence-band electron and hole tunneling
Wen-Chin Lee,Chenming Hu
DOI: https://doi.org/10.1109/16.930653
IF: 3.1
2001-07-01
IEEE Transactions on Electron Devices
Abstract:A semi-empirical model is proposed to quantify the tunneling currents through ultrathin gate oxides (1–3.6 nm). As a multiplier to a simple analytical model [1], [2], a correction function is introduced to achieve universal applicability to all different combinations of bias polarities (inversion and accumulation), gate materials (N+, P+, Si, SiGe) and tunneling processes. Each coefficient of the correction function is given a physical meaning and determined by empirical fitting. This new model can accurately predict all the current components that can be observed: electron tunneling from the conduction band (ECB), electron tunneling from the valence band (EVB), and hole tunneling from the valence band (HVB) in dual-gate poly-${\hbox {Si}}_{1-x}{\hbox {Ge}}_{x}$-gated ($x=0$ or 0.25) CMOS devices for various gate oxide thicknesses. In addition, this model can also be employed to determine the physical oxide thickness from $I$–$V$ data with high sensitivity. It is particularly sensitive in the very-thin-oxide regime, where $C$–$V$ extraction happens to be difficult or impossible (because of the presence of the large tunneling current).
engineering, electrical & electronic,physics, applied