Abstract:Based on the actually structure of high-k gate stack MOSFET device,a resonant tunneling model of the high-k gate stack structure was development.Obtained wave function of bound states between SiO2 and high-k interface through the schrodinger equation and poisson equations.Got resonance eigen state by using transverse resonance method,and the resonance tunneling coefficient by using the transfer matrix method.Simulated result of gate tunneling current density is agree well with the experimental results in literature.The influence of high-k gate various materials,gate electrode materials,interface layer thickness and high-k layer thickness on the resonance tunneling coefficient is discussed.The results show that,with the decreasing thickness of the HfO2 and Al2O3,the resonant tunneling coefficient of gate stack structure decreases,and their resonance peak reduce.With the decreasing thickness of La2O3,resonant tunneling coefficient increases,and it's resonance peak reduction.With the increasing thickness of SiO2,the resonant tunneling coefficient of HfO2,Al2O3,and La2O3-based gate stack structure decrease,and their resonance peaks are reduce.the resonant tunneling coefficient of HfO2,Al2O3 and La2O3-based gate stack with TiN gate electrode is much smaller than the corresponding gate stack structure with polysilicon gate electrode,and less resonance peak.

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