Abstract:Based on a self-consistent Schrodinger-Poisson solver and top-of-the-barrier model, a quantum transport simulator of p-type gate-all-around nanosheet FET is developed. The effects of material (Si/Ge), stress, crystallographic orientation, and cross-sectional size are deeply explored by numerical simulations for the device performance at the sub-3 nm technology node. A strain-dependent 6-band kmiddotp Hamiltonian is incorporated into the model for a more accurate calculation of E-k dispersion in the strain-perturbed valence band structure, where the curvature, energy shift, and splitting of subbands are investigated in detail for hole transport properties. Further, the effect of channel engineering is comprehensively analyzed, by evaluating density-of-states effective mass, average injection velocity, mobility, current density distributions, and the current-voltage characteristics. An effective performance improvement from 2 GPa compressive stress is obtained in [100]/(001) and [110]/(001) channels, with a 7% enhancement of ON-current in Ge nanosheet FETs. While a wider channel crosssection improves the drive current by increasing the effective channel width, a smaller cross-sectional width yields an average increase up to 29% in the ON-state injection velocity due to stronger quantum confinement.

Gate current modeling of high-k stack nanoscale MOSFETs

Modeling of Gate Current and Capacitance for Nanoscale MOSFETs with High-k Stacks

Modeling of Gate Tunneling Current for Nanoscale MOSFETs with High-k Gate Stacks

Modeling of Gate Current and Capacitance in Nanoscale-MOS Structures

Numerical Investigation of Low Frequency Noise in MOSFETs with High-k Gate Stacks

Reduction of Gate Current in Nanoscale MOS Devices

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Modeling of Tunneling Current Through Hf-based Dielectric Films for Nanoscale MOSFET

Analytical Model for High Current Density Trench Gate Mosfet

Gate Current for MOSFETs with High k Dielectric Materials

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

Modeling of direct tunneling current through interfacial oxide and high-K gate stacks

Modeling of High-k Gate Stack of Tunnel Barrier in Nonvolatile Memory MOS Structures

Dynamic Gate Capacitance Model for Switching Transient Analysis in P-GaN Gate HEMTs

Analytical Current Model for Long-Channel Junctionless Double-Gate Mosfets

Simulation and Analysis of Gate Stack DG MOSFET with Application of High-k Dielectric Using Visual TCAD

Analytical Gate Fringe Capacitance Model for Nanoscale MOSFET with Layout Dependent Effect and Process Variations

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

A Study of the Gate-Stack Small-Signal Model and Determination of Interface Traps in GaN-Based MIS-HEMTs

A Unified Drain Current Model for Nanoscale Double-Gate and Surrounding-Gate MOSFETs Incorporating Velocity Saturation