Abstract:We develop an analytical model for the Direct-Current (DC) and capacitance-voltage (CV) characteristics of AlGaN/GaN High Electron Mobility Transistors (HEMTs), providing accurate predictions of the transconductance and the gate capacitance in both linear and velocity saturation regions. The models provide an accurate and smooth connection in the area near the knee point for the DC characteristics, which is attributed to precise descriptions of the channel charge. An accurate model for the low-field mobility of the two dimensional electron gases (2DEG) has been developed, considering the nonmonotonic dependence of the carrier velocity on the electric field perpendicular to the channel for the first time. The calculated transconductance and output conductance are proved accurate and to have high order continuity, especially in large voltage biases, which is hard for some other analytical or numeral models. The gate capacitance has been obtained analytically and verified by experimental data. The slight decrease in the measured gate-to-source capacitance over the velocity saturation region which indicates the results of neutralization of donors and the contribution of the free electron in the AlGaN layer has been modeled accurately and smoothly for the first time. The predicted cut-off frequency is in excellent agreements with measured data over the full range of applied biases. The models are implemented into the HSPICE simulator for the DC, AC and transient simulations, with good speed and convergence characteristics.

A Study of the Gate-Stack Small-Signal Model and Determination of Interface Traps in GaN-Based MIS-HEMTs

Analytical Model for AlGaN/GaN High Electron Mobility Transistor

Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNx As Gate Dielectric

Modeling the Influence of the Acceptor-Type Trap on the 2DEG Density for GaN MIS-HEMTs

An analytical model on the gate control capability in p-GaN Gate AlGaN/GaN high-electron-mobility transistors considering buffer acceptor traps

Comparison of Methods for Accurate Characterization of Interface Traps in GaN MOS-HFET Devices

Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs

Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices

A Novel Insight on Interface Traps Density (Dit) Extraction in GaN-on-Si MOS-c HEMTs

Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

Influence of the Interface Acceptor-Like Traps on the Transient Response of AlGaN/GaN HEMTs

A Physics-Based Compact Direct-Current and Alternating-Current Model for AlGaN/GaN High Electron Mobility Transistors

A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage

Influence of the Acceptor-Type Trap on the Threshold Voltage of the Short-Channel GaN MOS-HEMT

On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors

Gate current modeling of high-k stack nanoscale MOSFETs

Analysis of trapping effect in GaN HEMT modeling

Analytical Model for Interface Traps-Dependent Back Bias Capability and Variability in Ultrathin Body and Box FDSOI MOSFETs

Modeling of Gate Tunneling Current for Nanoscale MOSFETs with High-k Gate Stacks

Two-dimensional analysis of the surface state effects in 4H-SiC MESFETs

Study on transconductance non-linearity of AlGaN/GaN HEMTs considering acceptor-like traps in barrier layer under the gate