Abstract:A novel space mapping (SM) modeling approach for gallium nitride (GaN) high-electron-mobility transistors (HEMTs) with trapping effects is presented in this article, advancing the SM technique for nonlinear device modeling. Existing SM modeling approach uses an external mapping to map an existing device model onto device data. When different branches inside the existing device model need to address very different behaviors, such as trapping effects and frequency dispersion in GaN HEMTs, it is hard for one external mapping to simultaneously map different behaviors. The proposed SM technique develops separate mappings for different branches, such that different behaviors can be mapped separately. Each mapping module is formulated to map a specific behavior in the overall model. Each mapping module is developed through machine learning to systematically overcome the gap between each internal branch and each set of target data, accelerating the process of model development. The proposed SM technique is a fast and systematic modeling approach, compared with the existing empirical function/equivalent circuit approach. Compared with the pure neural network modeling approach, the proposed SM technique employs less training data. Measurement data of a $2times 350,,mu text{m}$ GaN HEMT device are employed for model training and verification. Good agreement can be achieved between the developed large-signal model and the measurement data, including dc, pulsed I–V (PIV) at seven quiescent biases, $S$ -parameters, and power characteristics. Reasonably close predictions of load–pull figures of merit are achieved by the developed model. The model development illustrated in the example shows that the proposed SM technique is a fast modeling approach to develop an accurate large-s-gnal model for GaN HEMTs.

Analysis of trapping effect in GaN HEMT modeling

Large-signal modeling of GaN devices with emphasis on trapping effect and thermal challenges (Invited)

An Improved Analytical Model of GaN HEMT in Cascode Configuration During Turn-on Transition

An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs

A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage

Enhanced GaN HEMT large-signal model with self-heating and trapping effects for power amplifier design

GaN device and modeling with emphasis on trapping effect and thermal challenges for PA design (Invited)

A Normalized Quantitative Method for GaN HEMT Turn-ON Overvoltage Modeling and Suppressing

Space Mapping Technique Using Decomposed Mappings for GaN HEMT Modeling

A Study of the Gate-Stack Small-Signal Model and Determination of Interface Traps in GaN-Based MIS-HEMTs

Trap-Related Current Collapse Effects in GaN HEMTs

Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs

Theoretical Analysis of Buffer Trapping Effects on Off-State Breakdown Between Gate and Drain in AlGaN/GaN HEMTs

A Scalable Multiharmonic Surface-Potential Model of AlGaN/GaN HEMTs

Toward Reliable Extraction of the Properties of Border Traps in Lateral GaN Power MOSFET with a Distributed Network Model

An enhanced AlGaN/GaN HEMTs large-signal model with parameter extraction methodology

Influence of the Interface Acceptor-Like Traps on the Transient Response of AlGaN/GaN HEMTs

Negative Transconductance Effect in P-Gan Gate AlGaN/GaN HEMTs by Traps in Unintentionally Doped GaN Buffer Layer*

Comparison of Methods for Accurate Characterization of Interface Traps in GaN MOS-HFET Devices

Study on transconductance non-linearity of AlGaN/GaN HEMTs considering acceptor-like traps in barrier layer under the gate

Analytical Modeling of Capacitances for GaN HEMTs, Including Parasitic Components