Abstract:Current collapse (drain current dispersion, gradual power saturation, or memory effect) encountered during microwave GaN HEMT power amplifier operation remains to be a major reliability and stability issue for the highly promising, emerging III-nitride, polar semiconductor based technology. Current collapse leads to bias condition induced memory effect, which is particularly detrimental to broad band RF amplifiers operating with large peak-to-average signal level. Loss of polarization induced, surface mobile holes, accompanied by the reduction of transistor channel electron density have recently been identified as the root cause of these undesirable, transient effects exhibited by the polar semiconductor based transistors, in which charge carriers are primarily originated from the built-in electric dipoles of the nitride material. A novel ohmic metal contact scheme, presenting low energy barrier for both the transistor channel electrons, and the surface mobile holes, is found to be effective in eliminating the undesirable, time and signal strength dependence behavior of the transistor performance characteristics. A GaN MISHEMT with such compound ohmic contacts is found to be capable of operating at higher saturation current density, compared to that of a GaN HEMT with traditional ohmic contacts. The new finding represents a major breakthrough in polar semiconductor device technology for microwave power amplification.

Trap-Related Current Collapse Effects in GaN HEMTs

Study of Current Collapse Behaviors of Dual-Gate AlGaN/GaN HEMTs on Si

A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage

Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs

Probing electron trapping by current collapse in GaN/AlGaN FETs utilizing quantum transport characteristics

Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs

Identification of Semi-ON-State Current Collapse in AlGaN/GaN HEMTs by Drain Current Deep Level Transient Spectroscopy

An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs

Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs

Influence of the Interface Acceptor-Like Traps on the Transient Response of AlGaN/GaN HEMTs

Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors Using a Soft Switched Pulsed \(I-V\) Measurement

An insight to current collapse in GaN HEMT and suppressing techniques

Current Collapse Suppression by Gate Field-Plate in AlGaN/GaN HEMTs

Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress

Recoverable Current Collapse Effect of p-GaN HEMTs Under Short Circuit Stress

Analysis of trapping effect in GaN HEMT modeling

Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs under Electrostatic Discharge Stress

Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiNx stressor passivation

Simulation of Trap State Effects in GaN DHFETs on Buffer Leakage Current and Breakdown Voltage

Current Collapse, Memory Effect Free GaN HEMT

Effects of the Trap Level in the Unintentionally Doped GaN Buffer Layer on Optimized P‐gan Gate AlGaN/GaN HEMTs